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onsemi 40 V 6 A Switching Diode Surface Mount TO-252 3-Pin DPAK MBRD640CTT4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MBRD640CTT4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 6A |
| Peak Reverse Repetitive Voltage Vrrm | 40V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 15mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 75A |
| Maximum Forward Voltage Vf | 900mV |
Key Features
- This diode features a common cathode configuration suitable for switching applications.
- The device supports peak non-repetitive forward surge current up to 75 A.
- Operating temperature range extends from -65°C to 175°C ensuring reliability in harsh conditions.
- Its maximum forward voltage drop is 900 mV, enabling efficient rectification with low losses.
- Compact TO-252 epoxy moulded case ensures easy automated board assembly and lightweight design.
- The diode complies with automotive standard AEC-Q101 for high quality and durability.
- The device withstands peak reverse repetitive voltage of 40 V and a peak reverse current of 15 mA.
- The dimensions of 6.73 mm length, 6.22 mm width and 2.38 mm height make it ideal for space-constrained electronics.
Product Description
onsemi MBRD640CTT4G is a surface mount switching diode designed for applications requiring 40 V reverse voltage and 6 A forward current capability. Housed in a compact TO-252 3-pin DPAK package, this diode employs Schottky barrier technology to achieve low forward voltage drop and fast switching speeds.
The device provides excellent performance in low voltage, high frequency rectification, freewheeling, and polarity protection circuits. It operates reliably over a wide temperature range from -65°C to 175°C, making it suitable for industrial, automotive, and power management applications.
Featuring AEC-Q101 automotive qualification, this diode meets stringent standards for durability and reliability in automotive electronics.
The epoxy moulded package offers lightweight construction (~11.7 mg) and optimal compatibility with automated assembly lines. Its 3-pin common cathode configuration allows easy integration into complex semiconductor circuits.
Key features include peak forward surge current of 75 A, maximum forward voltage of 900 mV, and peak reverse current of 15 mA at rated voltage specifications. These characteristics ensure energy efficiency and minimize power dissipation in switching environments.
This diode supports peak reverse repetitive voltage up to 40 V. Compact dimensions: Length 6.73 mm, Width 6.22 mm, Height 2.38 mm. Pb-Free material composition for environmental compliance. Ideal for automotive, industrial power supplies, and electronic circuit protection.
Designed for optimal automated board assembly and stress protection guarding.
Explore onsemi's range of high-performance switching diodes and enhance your semiconductor component selection for reliable power rectification and switching applications at EnvMart.
Explore more products in our Semiconductor Switching Diode category.
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Frequently Asked Questions
The maximum operating temperature of this diode is 175°C.
It supports a peak reverse repetitive voltage of 40 V.
This diode has a maximum continuous forward current capability of 6 A.
The peak non-repetitive forward surge current rating is 75 A.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
It uses a common cathode configuration.
The maximum forward voltage drop is 900 mV.
The minimum operating temperature is -65°C.
This diode complies with the AEC-Q101 automotive standard.
The peak reverse current rating is 15 mA at rated voltage specifications.
This diode is suitable for low voltage, high frequency rectification, freewheeling, and polarity protection circuits.
The weight of this diode is approximately 11.7 mg.
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