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onsemi General Purpose PNP Transistor SMMBT2907ALT1G, -600 mA, -60 V dc, 3-Pin SOT-23

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model SMMBT2907ALT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V dc
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 60V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor comes in a compact 3-Pin SOT-23 surface mount package.
  • It supports a maximum power dissipation of 225 mW suitable for low power applications.
  • Features a minimum DC current gain (hFE) of 50 and operates up to 150°C temperature.
  • Designed for reliable switching in industrial, electronic, and communication applications.
  • Operates within -55°C to 150°C temperature range providing durability in harsh conditions.
  • Maximum transition frequency is 100 MHz, suitable for high-frequency signal amplification.
  • Offers full PNP bipolar transistor configuration with 3 pins, optimized for surface mounting.

Product Description

onsemi SMMBT2907ALT1G is a general purpose PNP bipolar transistor designed for various electronic circuit applications. It operates at a maximum collector current of -600 mA and a collector-emitter voltage rating of -60 V dc, making it suitable for switching and amplification tasks in low power environments.

The transistor is housed in a 3-Pin SOT-23 surface mount package, measuring 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, ideal for space-constrained PCB layouts.

It supports a maximum power dissipation of 225 mW and can operate reliably across a temperature range of -55°C to 150°C, providing robustness for industrial and commercial use. The device features a minimum DC current gain (hFE) of 50, enabling effective signal amplification with stable performance.

With a maximum transition frequency of 100 MHz, this transistor is suitable for high-frequency applications including communication circuits and high-speed switching. The SMMBT2907ALT1G lacks specific semiconductor standards approvals but meets general semiconductor quality demands for electronic components.

This transistor provides reliable PNP functionality with stable electrical characteristics. Compact surface mount SOT-23 package allows for efficient board space utilization. Wide operating temperature range ensures durability under varied environmental conditions.

Ideal for use in low power amplification, switching, and signal processing applications. Supports collector base maximum voltage of 60 V and emitter base voltage of -5 V. Pin count is 3, suitable for standard bipolar transistor circuit designs.

This transistor is widely used in industrial, electronic manufacturing, communication, and laboratory environments. Its performance and compact form factor make it a suitable component for modern electronic device assembly and repair.

Explore the Electronics & Electricals category at EnvMart for more semiconductor and transistor products tailored to your technical requirements.

Explore more products in our Bipolar Transistors category.

onsemi General Purpose PNP Transistor SMMBT2907ALT1G, -600 mA, -60 V dc, 3-Pin SOT-23
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Frequently Asked Questions

The maximum collector current for this model is -600 mA.

It operates within a temperature range of -55°C to 150°C.

This transistor supports a maximum power dissipation of 225 mW.

The dimensions of this model are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The minimum DC current gain (hFE) for the SMMBT2907ALT1G is 50.

It comes in a 3-Pin SOT-23 surface mount package.

The maximum collector-emitter voltage rating is -60 V dc.

The maximum transition frequency is 100 MHz.

This model features a full PNP bipolar transistor configuration.

The maximum emitter-base voltage (VEBO) is -5 V.

It is suitable for low power amplification, switching, and signal processing applications in industrial and communication environments.

The country of origin for this model is India.

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