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onsemi NPN Transistor 500 mA 25 V 3-Pin SOT-23 NSVMMBTH10LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model NSVMMBTH10LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 25V
Maximum Collector Base Voltage VCBO 30V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a maximum power dissipation of 225 mW for efficient operation.
  • It supports a maximum transition frequency of 100 MHz suitable for RF applications.
  • The device operates reliably over a temperature range of -55°C to 150°C.
  • Its surface mount SOT-23 package ensures compact PCB integration.
  • Designed with a minimum DC current gain of 60 for stable amplification performance.
  • The transistor polarity is NPN, configuring it for common switching and amplification use.
  • It has a maximum collector-base voltage rating of 30 V dc, supporting various operating conditions.
  • Pin count is 3, enabling straightforward circuit implementation.

Product Description

onsemi NSVMMBTH10LT1G is a high-performance NPN bipolar transistor designed for electronic and power circuit applications, rated at a maximum collector current of 500 mA and a collector-emitter voltage of 25 V housed in a compact 3-pin SOT-23 surface-mount package. This transistor is ideal for use in industrial, communication, and RF circuits due to its high switching speed with a transition frequency up to 100 MHz.

Operating reliably from -55°C to 150°C, the device is capable of enduring harsh environmental conditions. The transistor features a minimum DC current gain (hFE) of 60, ensuring good amplification characteristics in switching and general purpose uses. Its low power dissipation of 225 mW supports energy-efficient designs.

The compact 3.04 mm length, 2.64 mm width, and 1.11 mm height SOT-23 package simplifies integration into densely populated PCBs while surface mounting enhances modern manufacturing processes. This single transistor configuration is suitable for application in signal amplification, switching circuits, and as part of automotive-grade systems although this specific model is not automotive qualified.

The NSVMMBTH10LT1G transistor is RoHS compliant with no additional standards approvals, maintaining compliance for use in eco-friendly electronic assemblies. Its technical performance makes it suitable in laboratory instrumentation, industrial electronic assemblies, communication devices, and power management circuits within commercial and manufacturing sectors.

This transistor features a maximum power dissipation of 225 mW for efficient operation. It supports a maximum transition frequency of 100 MHz suitable for RF applications. The device operates reliably over a temperature range of -55°C to 150°C.

Its surface mount SOT-23 package ensures compact PCB integration. Designed with a minimum DC current gain of 60 for stable amplification performance. The transistor polarity is NPN, configuring it for common switching and amplification use.

It has a maximum collector-base voltage rating of 30 V dc, supporting various operating conditions. Pin count is 3, enabling straightforward circuit implementation. Explore more cutting-edge semiconductor devices and Bipolar Transistors at EnvMart to fit diverse application requirements.

onsemi NPN Transistor 500 mA 25 V 3-Pin SOT-23 NSVMMBTH10LT1G
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Frequently Asked Questions

The maximum collector current rating of this model is 500 mA.

This transistor supports a maximum transition frequency of 100 MHz, making it suitable for RF applications.

It operates reliably over a temperature range of -55°C to 150°C.

The transistor is housed in a compact 3-pin SOT-23 surface-mount package.

The maximum power dissipation is 225 mW.

It has a minimum DC current gain (hFE) of 60, ensuring stable amplification performance.

The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum collector-emitter voltage rating is 25 V.

This model is an NPN bipolar transistor, suitable for common switching and amplification applications.

Yes, the NSVMMBTH10LT1G is RoHS compliant, ensuring it meets eco-friendly electronic assembly standards.

The maximum collector-base voltage rating is 30 V dc.

It is suitable for use in signal amplification, switching circuits, and various electronic applications, including industrial and communication devices.

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