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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.11mm |
| Length | 3.04mm |
| Model | NSVMMBTH10LT1G |
| Width | 2.64mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 25V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 25V |
| Maximum Collector Base Voltage VCBO | 30V dc |
| Maximum Power Dissipation Pd | 225mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
onsemi NSVMMBTH10LT1G is a high-performance NPN bipolar transistor designed for electronic and power circuit applications, rated at a maximum collector current of 500 mA and a collector-emitter voltage of 25 V housed in a compact 3-pin SOT-23 surface-mount package. This transistor is ideal for use in industrial, communication, and RF circuits due to its high switching speed with a transition frequency up to 100 MHz.
Operating reliably from -55°C to 150°C, the device is capable of enduring harsh environmental conditions. The transistor features a minimum DC current gain (hFE) of 60, ensuring good amplification characteristics in switching and general purpose uses. Its low power dissipation of 225 mW supports energy-efficient designs.
The compact 3.04 mm length, 2.64 mm width, and 1.11 mm height SOT-23 package simplifies integration into densely populated PCBs while surface mounting enhances modern manufacturing processes. This single transistor configuration is suitable for application in signal amplification, switching circuits, and as part of automotive-grade systems although this specific model is not automotive qualified.
The NSVMMBTH10LT1G transistor is RoHS compliant with no additional standards approvals, maintaining compliance for use in eco-friendly electronic assemblies. Its technical performance makes it suitable in laboratory instrumentation, industrial electronic assemblies, communication devices, and power management circuits within commercial and manufacturing sectors.
This transistor features a maximum power dissipation of 225 mW for efficient operation. It supports a maximum transition frequency of 100 MHz suitable for RF applications. The device operates reliably over a temperature range of -55°C to 150°C.
Its surface mount SOT-23 package ensures compact PCB integration. Designed with a minimum DC current gain of 60 for stable amplification performance. The transistor polarity is NPN, configuring it for common switching and amplification use.
It has a maximum collector-base voltage rating of 30 V dc, supporting various operating conditions. Pin count is 3, enabling straightforward circuit implementation. Explore more cutting-edge semiconductor devices and Bipolar Transistors at EnvMart to fit diverse application requirements.
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