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onsemi NPN Transistor, 800 mA Collector Current, 32 V Collector-Emitter Voltage, 3-Pin SOT-23 BCW65ALT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BCW65ALT1G
Width 2.64mm
Mount Type Surface
Series BCW65
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 32V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia Transistor, 100 mA NPN, 32 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Maximum DC collector current of 800 mA for robust switching.
  • Collector-emitter voltage up to 32 V suitable for medium voltage applications.
  • Surface mount SOT-23 package for compact PCB design.
  • Single NPN transistor configuration ideal for general purpose use.
  • Maximum power dissipation rated at 225 mW for reliable operation.
  • Operating temperature range from -55°C to 150°C for industrial environments.
  • 3 pins wired for easy integration in electronic assemblies.

Product Description

onsemi BCW65ALT1G is a high-performance NPN transistor designed for general-purpose applications requiring a maximum DC collector current of 800 mA and a collector-emitter voltage of 32 V. Packaged in a compact 3-pin SOT-23 surface mount package, this transistor offers efficient PCB real estate usage and reliable electrical performance.

This transistor features a maximum power dissipation of 225 mW and can operate over a broad temperature range from -55°C up to 150°C, making it well suited for demanding industrial, automotive, communication, and consumer electronics applications. The device supports high-frequency switching with a transition frequency of 100 MHz. Its transistor polarity is NPN with a minimum DC current gain of 35, providing sufficient gain for amplification and switching tasks.

The BCW65ALT1G transistor is suitable for use in industrial control circuits, signal amplification, and low power switching applications. It is designed to meet modern surface mount technology standards, facilitating efficient mass assembly and integration. The compact dimensions of length 3.04 mm, width 2.64 mm, and height 1.11 mm allow for versatile placement on various PCB layouts.

Package Contents: Single unit transistor in 3-pin SOT-23 package, ready for surface mounting on electronic circuit boards. It supports robust performance under operating conditions including automotive temperature ranges without automotive standard certification.

Maximum DC collector current of 800 mA. Collector-emitter voltage rating of 32 V. Package: 3-pin SOT-23 surface mount. High transition frequency of 100 MHz suitable for fast switching. Operating temperature range from -55°C to 150°C for industrial reliability.

Power dissipation of 225 mW for stable operation. Transistor configured as NPN polarity type. Compact package size ideal for dense PCB designs.

Explore our extensive selection of Bipolar Transistors for semiconductor solutions at EnvMart, designed for industrial, laboratory, automotive, and communication electronics applications.

onsemi NPN Transistor, 800 mA Collector Current, 32 V Collector-Emitter Voltage, 3-Pin SOT-23 BCW65ALT1G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 800 mA.

The collector-emitter voltage rating is up to 32 V.

It has a maximum transition frequency of 100 MHz, making it suitable for high-frequency switching applications.

The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The operating temperature range is from -55°C to 150°C, suitable for industrial applications.

The maximum power dissipation is rated at 225 mW.

This model is configured as a single NPN transistor.

The minimum DC current gain (hFE) is 35, providing sufficient gain for amplification tasks.

The maximum emitter-base voltage (VEBO) is 5 V.

It is suitable for industrial control circuits, signal amplification, and low power switching applications.

The transistor has a pin count of 3, designed for surface mounting.

The country of origin for this transistor is India.

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