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onsemi NPN Transistor 100 mA 45 V 3-Pin SOT-23 BC847ALT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3.04mm
Model BC847ALT1G
Width 2.64mm
Mount Type Surface
Series BC847
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 90
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100 mA ensures suitable performance for low power applications.
  • Collector-emitter voltage rating of 45 V supports moderate voltage needs.
  • Compact SOT-23 package with 3 pins enables surface mount applications.
  • Transistor polarity NPN, single configuration simplifies usage in common circuits.
  • Maximum power dissipation of 300 mW allows reliable operation without excessive heat.
  • High transition frequency of 100 MHz supports high-speed switching tasks.
  • Operating temperature range from -55°C to 150°C ensures durability in various environments.
  • Automotive AEC-Q101 standard qualification indicates robust quality and reliability.

Product Description

onsemi BC847ALT1G is a general-purpose NPN transistor designed for electronic switching and amplification functions in industrial, automotive, and commercial electronic applications. Featuring a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V, this transistor supports low to moderate power circuits.

Housed in a compact 3-pin SOT-23 surface-mount package, it occupies minimal PCB space, making it ideal for densely packed circuit boards. Its maximum power dissipation is rated at 300 mW, ensuring sufficient thermal handling for standard low-power electronic designs.

This transistor exhibits a high transition frequency (ft) of 100 MHz, enabling rapid switching performance suitable for high-frequency signal processing. It operates reliably across an extended temperature range from -55°C up to 150°C, meeting stringent industrial and automotive environment requirements.

The BC847ALT1G series complies with the AEC-Q101 automotive standard, certifying its durability and quality for automotive electronics and harsh environments. Its single transistor configuration and NPN polarity simplify design implementation in common bipolar transistor applications.

Maximum DC collector current of 100 mA. Collector-emitter voltage rating of 45 V. SOT-23 3-pin surface mount package. Maximum power dissipation of 300 mW. High transition frequency of 100 MHz. Operating temperature range from -55°C to 150°C.

Automotive AEC-Q101 qualified.

This transistor is widely used in electronic circuits for amplification, switching, signal processing, and automotive electronics. It enables designers to create compact and efficient PCB layouts with robust performance.

Explore the comprehensive onsemi transistor range in the Bipolar Transistors category at EnvMart for quality semiconductor components.

onsemi NPN Transistor 100 mA 45 V 3-Pin SOT-23 BC847ALT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for low power applications.

The collector-emitter voltage rating is 45 V, which supports moderate voltage needs in electronic circuits.

It comes in a compact SOT-23 package with 3 pins, enabling surface mount applications.

The maximum power dissipation is rated at 300 mW, allowing for reliable operation without excessive heat.

This model has a high transition frequency of 100 MHz, suitable for high-speed switching tasks.

The operating temperature range is from -55°C to 150°C, ensuring durability in various environments.

Yes, it complies with the AEC-Q101 automotive standard, indicating robust quality and reliability for automotive electronics.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) is 90, which is important for amplification applications.

It features a single transistor configuration, which simplifies usage in common circuits.

The maximum emitter-base voltage (VEBO) is 6 V, which is a critical parameter for circuit design.

The maximum collector-base voltage (VCBO) rating is 50 V DC, supporting its use in various applications.

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