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onsemi Silicon Junction Switching Diode 2 A, 150 V, 2-Pin Surface Mount DO-214AC MURA120T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.05mm |
| Length | 4.57mm |
| Model | MURA120T3G |
| Width | 2.92mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214AC |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 40A |
| Maximum Forward Voltage Vf | 875mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 150V |
Key Features
- The diode features a maximum forward current of 2 amperes for reliable current conduction.
- Maximum peak reverse voltage rating of 150 volts ensures robust blocking capability.
- Surface mount DO-214AC package with dimensions 4.57mm length, 2.92mm width, and 2.05mm height.
- Fast peak reverse recovery time of 35 nanoseconds reduces switching losses in high-frequency circuits.
- Wide operating temperature range from -65°C to 175°C suits diverse industrial environments.
- Peak non-repetitive forward surge current up to 40 amperes supports transient power demands.
- The package is designed for automatic insertion, improving production efficiency.
- Ideal for applications in power electronics, industrial switching, and electronic component assemblies.
Product Description
onsemi MURA120T3G is a silicon junction switching diode designed for surface mount technology applications. It supports a maximum forward current of 2 A and a peak repetitive reverse voltage of 150 V, making it suitable for use in power electronics, switching circuits, and other industrial electronic assemblies.
This diode features a DO-214AC package type, measuring 4.57 mm in length, 2.92 mm in width, and 2.05 mm in height. It has a fast peak reverse recovery time of 35 ns, which minimizes switching losses and improves circuit efficiency.
The device operates reliably across a broad temperature range, from -65°C to 175°C, ensuring performance in demanding thermal environments. It also supports a peak non-repetitive forward surge current of 40 A, suitable for transient surges in industrial applications.
The diode has a single silicon junction configuration for effective rectification. Its surface mount design facilitates easy automated PCB assembly. Compact form factor supports high-density electronic assemblies. Designed for robust electrical performance in switching and power circuits.
Manufactured to precise specifications ensuring consistency and reliability. Passes standard quality controls but does not carry specific certifications or automotive standards. Ideal for use in industrial, laboratory, manufacturing, and electronic device construction contexts.
Package sold on reels for production line efficiency. Explore a wide range of high-quality discrete semiconductors and Switching Diodes at EnvMart for professional electronic component needs.
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Frequently Asked Questions
The maximum forward current rating of this diode is 2 amperes, allowing for reliable current conduction in various applications.
This model has a peak reverse voltage rating of 150 volts, ensuring robust blocking capability in circuits.
The DO-214AC package measures 4.57 mm in length, 2.92 mm in width, and 2.05 mm in height.
It supports a peak non-repetitive forward surge current of up to 40 amperes, suitable for handling transient power demands.
The diode operates reliably across a temperature range from -65°C to 175°C, making it suitable for diverse industrial environments.
The peak reverse recovery time is 35 nanoseconds, which helps to reduce switching losses in high-frequency circuits.
This model features a surface mount design, facilitating easy automated PCB assembly.
This diode has a 2-pin configuration, suitable for various circuit designs.
The MURA120T3G has a single silicon junction configuration, which is effective for rectification in power circuits.
The maximum forward voltage drop is 875 mV, which is important for efficiency in circuit design.
This diode is ideal for applications in power electronics, industrial switching, and electronic component assemblies.
The MURA120T3G is manufactured in India, ensuring compliance with specified production standards.
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