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onsemi Silicon Junction Switching Diode 2 A 200 V 2-Pin DO-41 MUR220G
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 2.7mm |
| Brand | onsemi |
| Height | 5.2mm |
| Length | 5.2mm |
| Model | MUR220G |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 35A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Single silicon junction diode designed for switching applications.
- Features a DO-41 package with 2-pin configuration for easy through-hole mounting.
- Maximum forward current rating of 2 A and peak reverse voltage of 200 V.
- Fast peak reverse recovery time of 35 nanoseconds for high-speed switching.
- Operates reliably within temperature range from -65°C to 175°C.
- Maximum forward voltage drop of 950 mV optimizes efficiency.
- Capable of withstanding peak non-repetitive surge current of 35 A.
- Ideal for rectification and switching in power management and electronic circuits.
Product Description
onsemi MUR220G is a high-performance silicon junction switching diode designed for use in electronic components and power circuits. Packaged in a DO-41 2-pin through-hole format, this diode offers a maximum forward current of 2 A and a peak reverse voltage of 200 V, making it suitable for switching and rectification applications in various industrial, laboratory, HVAC, and manufacturing systems.
The device features a fast peak reverse recovery time of 35 nanoseconds, allowing it to operate efficiently in fast switching environments. It delivers a maximum forward voltage drop of 950 millivolts which enhances energy efficiency and reduces power losses in circuits.
Operational temperature range from -65°C to 175°C ensures stable performance under harsh conditions. It can tolerate peak non-repetitive forward surge current up to 35 A, providing reliability during transient load conditions.
With compact physical dimensions of 5.2 mm length and 2.7 mm diameter, the MUR220G fits well into space-constrained PCB designs. Its through-hole mount type facilitates ease of installation and robust mechanical stability in assemblies.
Single silicon junction diode optimized for switching. DO-41 package with two pins for through-hole mounting. 2 A maximum forward current and 200 V peak reverse voltage. 35 ns peak reverse recovery time supports high-speed switching.
Wide operating temperature range from -65°C to 175°C. 950 mV maximum forward voltage drop enhances circuit efficiency. Capable of 35 A peak non-repetitive surge current. Compact 5.2 mm by 2.7 mm dimension ensures PCB space efficiency.
Ideal for power rectification and switching applications in industrial electronics. Non-automotive standard diode suitable for general applications.
This diode is commonly applied in power supplies, electronic control hardware, and other electronic devices requiring reliable rectification and switching capabilities. Its design supports improved production efficiency and circuit longevity in electrical and electronic manufacturing.
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Frequently Asked Questions
The maximum forward current rating of the MUR220G diode is 2 A.
The peak reverse voltage for the MUR220G is 200 V.
This model has a fast peak reverse recovery time of 35 nanoseconds.
The operating temperature range for this diode is from -65°C to 175°C.
The maximum forward voltage drop of this diode is 950 mV.
The MUR220G is packaged in a DO-41 format with a 2-pin configuration for through-hole mounting.
It can withstand a peak non-repetitive surge current of up to 35 A.
The dimensions of this diode are 5.2 mm in length and 2.7 mm in diameter.
This diode is commonly used in power supplies, electronic control hardware, and other electronic devices requiring rectification and switching capabilities.
The MUR220G is a single silicon junction diode.
The fast peak reverse recovery time of 35 ns allows the diode to operate efficiently in high-speed switching environments.
The MUR220G diode is manufactured in India.
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