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Nexperia P-Channel MOSFET 2 A 20 V Enhancement, 3-Pin SOT-23 NX2301P

Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model NX2301P
Width 1.4mm
Mount Type Surface
Series NX2301P
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 2A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 400mW
Typical Gate Charge Qg @ Vgs 4.5nC
Maximum Gate Source Voltage Vgs -8, +8V

Key Features

  • Features enhancement mode channel operation for efficient switching.
  • Supports a maximum power dissipation of 400 mW for reliable operation.
  • Compact surface mount design with a small SOT-23 package footprint.
  • Wide operating temperature range from -55°C to 150°C for industrial applications.
  • Maximum drain source resistance of 120 milliohms ensures low conduction losses.
  • Typical gate charge of 4.5 nC provides fast switching capability.
  • Meets automotive standard AEC-Q101 for robust quality assurance.
  • Designed for use in power switching and amplification in electronic circuits.

Product Description

Nexperia NX2301P is a P-Channel MOSFET transistor featuring a maximum continuous drain current of 2 A and a maximum drain source voltage of 20 V. This enhancement mode MOSFET is housed in a compact 3-pin SOT-23 surface-mount package, making it suitable for space-constrained circuit designs.

The device supports a maximum power dissipation of 400 mW and operates reliably in a wide temperature range from -55°C to 150°C. With a low maximum drain source resistance of 120 milliohms, it offers efficient conduction performance with minimal power loss, complemented by a typical gate charge of 4.5 nC for effective high-speed switching.

Designed to meet the AEC-Q101 automotive standard, this MOSFET is built for demanding industrial, automotive, and general-purpose electronic applications requiring robust semiconductor performance.

Enhancement mode P-Channel MOSFET for efficient power management. Maximum continuous drain current of 2 A to handle moderate load currents. Compact SOT-23 package enables easy surface mounting and integration. Wide operating temperature range ensures operation in harsh environments.

Low drain source resistance minimizes heat generation and power waste. Automotive AEC-Q101 compliant, affirming reliability and quality. Typical gate charge supports fast switching in power circuits.

This semiconductor device is ideal for use in power supply circuits, switching regulators, load switches, and other electronic equipment in industrial, automotive, and consumer electronics sectors. Its small form factor and high reliability make it a preferred choice for designers looking to optimize PCB layouts while maintaining performance.

Explore more high-quality discrete semiconductors and MOSFETs at EnvMart for reliable and efficient electronic design solutions.

Nexperia P-Channel MOSFET 2 A 20 V Enhancement, 3-Pin SOT-23 NX2301P
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Frequently Asked Questions

The maximum continuous drain current for this model is 2 A.

It can handle a maximum drain source voltage of 20 V.

The maximum power dissipation for this unit is 400 mW.

This model operates reliably within a temperature range of -55°C to 150°C.

The typical gate charge is 4.5 nC.

It is housed in a compact 3-pin SOT-23 surface-mount package.

The maximum drain source resistance is 120 milliohms.

This MOSFET meets the AEC-Q101 automotive standard.

It uses an enhancement mode P-channel configuration.

The dimensions are 1 mm in height, 3 mm in length, and 1.4 mm in width.

The maximum gate source voltage is -8 V to +8 V.

This model is designed for power switching and amplification in electronic circuits, including applications in industrial and automotive sectors.

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