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onsemi General Purpose PNP Transistor TO-225 Package, -4 A Collector Current, -100 V Collector Emitter Voltage MJE253G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 11.04mm |
| Length | 7.8mm |
| Model | MJE253G |
| Width | 3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-225 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | -4A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 10MHz |
Key Features
- Supports maximum DC collector current of -4 A for robust performance.
- Maximum collector emitter voltage of -100 V enables use in high voltage circuits.
- Through hole mount type with 3-pin TO-225 package for easy PCB integration.
- Minimum DC current gain (hFE) of 40 ensures efficient transistor operation.
- Operates reliably from -65°C to 150°C ambient temperature range.
- Maximum power dissipation of 15 W supports demanding power requirements.
- Maximum transition frequency of 10 MHz suitable for moderate frequency switching.
- Designed for general purpose applications using a PNP transistor configuration.
Product Description
onsemi MJE253G transistor is a general purpose PNP bipolar transistor designed for use in various industrial, automotive, and electronic applications requiring medium power switching and amplification capabilities. Its TO-225 package with 3 pins allows secure through-hole mounting in electronic circuits.
With a maximum DC collector current of -4 amperes and a maximum collector emitter voltage rating of -100 volts, this transistor is suited for circuits that handle substantial power and voltage. This device features a minimum DC current gain (hFE) of 40 and a maximum power dissipation capability of 15 watts, enabling efficient operation in load-driving and amplification scenarios.
The transistor operates within a wide temperature range from -65°C to 150°C, ensuring reliable performance in harsh environments. Its maximum transition frequency of 10 MHz makes it appropriate for use in moderate frequency switching and signal amplification tasks.
Its compact physical dimensions of 11.04 mm height, 7.8 mm length, and 3 mm width facilitate space-saving PCB layouts. The device is suitable for use in power management, industrial controls, and automotive electronics requiring PNP transistor configuration.
Supports up to -4 amperes collector current. Maximum voltage rating of -100 volts collector-to-emitter. Through-hole mounting style in TO-225 package. Minimum current gain ensures dependable switching performance. Power dissipation rating supports medium power applications.
Wide operating temperature range for industrial use. Moderate maximum transition frequency for various control circuits. Compact dimensions allow effective PCB integration.
The onsemi MJE253G transistor is ideal for electrical engineers needing reliable PNP transistors for industrial, automotive, and power electronic projects. Explore more high quality semiconductors and transistors within EnvMart’s extensive catalog for your design and production needs.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The MJE253G supports a maximum DC collector current of -4 A.
This model has a maximum collector-emitter voltage rating of -100 V, making it suitable for high voltage applications.
It comes in a TO-225 package, which is designed for through-hole mounting.
The transistor operates reliably within a temperature range of -65°C to 150°C.
It has a maximum power dissipation rating of 15 W, suitable for medium power applications.
The minimum DC current gain (hFE) for the MJE253G is 40, ensuring efficient operation.
This model has dimensions of 11.04 mm in height, 7.8 mm in length, and 3 mm in width.
The MJE253G has a maximum transition frequency of 10 MHz, making it suitable for moderate frequency switching.
It is designed as a PNP transistor configuration, suitable for various applications.
This transistor features a 3-pin configuration for easy integration into circuits.
It is suitable for general purpose applications, including industrial, automotive, and power management circuits.
The maximum emitter-base voltage (VEBO) for the MJE253G is 7 V.
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