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onsemi Transistor, 5 A NPN, 50 V, 4-Pin TP-FA Surface Mount 15W 2SC5706-TL-H

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 9.5mm
Length 6.5mm
Model 2SC5706-TL-H
Width 2.3mm
Mount Type Surface
Series 2SC5706
Maximum Operating Temperature 150°C
Package Type TP-FA
Pin Count 4
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc 5A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • The transistor offers a maximum power dissipation of 15 watts for reliable performance.
  • It features a maximum collector base voltage of 100 volts for robust operations.
  • The device operates at a maximum transition frequency of 1 MHz, suitable for medium-frequency applications.
  • A minimum DC current gain (hFE) of 200 ensures efficient amplification characteristics.
  • The transistor supports a maximum operating temperature up to 150°C for durability in demanding environments.
  • Compact dimensions of 9.5 mm height, 6.5 mm length, and 2.3 mm width enable space-saving PCB layouts.
  • The 4-pin package type TP-FA facilitates easy surface mounting in electronic circuits.

Product Description

onsemi 2SC5706-TL-H Transistor is a high-performance NPN bipolar transistor designed for general-purpose applications requiring up to 5 amperes collector current and 50 volts collector-emitter voltage. It features a four-pin TP-FA surface mount package, making it suitable for compact electronic designs.

This transistor can dissipate up to 15 watts of power, ensuring stable operation under moderate to heavy load conditions. Its collector base voltage rating of 100 volts and emitter base voltage of 6 volts support reliable switching and amplification functions.

The device operates with a minimum DC current gain (hFE) of 200, providing efficient signal amplification. Operating frequency reaches up to 1 MHz, making this transistor suitable for medium-frequency circuits in industrial, electronics, and power management contexts.

With its maximum operating temperature of 150°C, the 2SC5706-TL-H is capable of withstanding harsh thermal environments commonly encountered in industrial and automotive electronics applications.

Dimensions of height 9.5 mm, length 6.5 mm, and width 2.3 mm make it a compact choice for tight PCB layouts, while the 4-pin configuration simplifies mounting and integration into various semiconductor designs.

Maximum DC collector current of 5 amperes. Maximum collector-emitter voltage of 50 volts. Power dissipation capability of 15 watts. Minimum current gain (hFE) of 200. Transition frequency up to 1 MHz. Surface mount package type TP-FA.

Operates up to 150°C maximum temperature. Compact dimensions with 4-pin configuration.

This onsemi bipolar transistor is ideal for use in electronic equipment, industrial control systems, and power management applications requiring reliable medium-power switching and amplification.

Explore more Bipolar Transistors and related semiconductor products in the Electronics & Electricals category on EnvMart.

onsemi Transistor, 5 A NPN, 50 V, 4-Pin TP-FA Surface Mount 15W 2SC5706-TL-H
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Frequently Asked Questions

The maximum DC collector current for this model is 5 amperes.

This transistor can dissipate up to 15 watts of power.

The dimensions are 9.5 mm in height, 6.5 mm in length, and 2.3 mm in width.

The maximum collector-emitter voltage rating for this transistor is 50 volts.

It operates with a maximum transition frequency of up to 1 MHz.

The minimum DC current gain (hFE) is 200.

This transistor can operate at a maximum temperature of 150°C.

It features a 4-pin TP-FA surface mount package.

The maximum collector base voltage rating is 100 volts.

The maximum emitter base voltage (VEBO) is 6 volts.

This model uses a single transistor configuration.

It is suitable for general-purpose applications requiring medium-power switching and amplification.

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