onsemi Transistor 1 A NPN 100 V 3-Pin PCP Surface Mount 2SC3646S-TD-E

onsemi 2SC3646S-TD-E Bipolar Transistor is a general-purpose NPN semiconductor device designed for use in electronic circuits requiring a maximum collector current of 1 ampere and high collector-emitter voltage up to 100 volts. Packaged in a surface mount 3-pin PCP form factor, it enables compact PCB layouts and efficient assembly.

This transistor features a minimum DC current gain (hFE) of 100, which ensures effective amplification for various signal applications. It dissipates power up to 1.3 watts with maximum transition frequency of 1 MHz, making it suitable for switching and amplification tasks in power management and signal processing circuits.

Its mechanical dimensions include a length of 4.6 mm, width of 4 mm, and height of 1.5 mm, supporting design flexibility in densely packed circuit boards. The transistor can operate at temperatures up to 150°C, making it reliable in demanding industrial, consumer electronics, automotive, and communication device environments.

The device is configured as a single NPN transistor with maximum collector-base voltage rating of 120 V and emitter-base voltage rating of 6 V, providing voltage tolerance for various circuit conditions. This transistor is primarily intended for surface mount technology (SMT) applications requiring robust, efficient switching and amplification.

Maximum DC collector current of 1 ampere ensures strong current handling capability. Maximum collector-emitter voltage rating is 100 volts for high voltage applications. Surface mount design with 3 pins provides easy PCB integration.

Minimum DC current gain (hFE) of 100 ensures efficient amplification performance. Maximum power dissipation is 1.3 watts to maintain device reliability under load. Maximum transition frequency of 1 MHz supports moderate frequency switching applications.

Compact dimensions of 4.6 mm length, 4 mm width, and 1.5 mm height fit space-constrained designs. Maximum operating temperature up to 150°C allows use in elevated temperature environments. Single transistor configuration with NPN polarity ideal for general-purpose electronic circuits.

Maximum collector-base voltage of 120 V and emitter-base voltage of 6 V provide robust voltage margins.

This transistor is well-suited for industrial electronics, power management circuits, communication devices, automotive electronics, and consumer electronic applications where reliable switching and amplification are required. It is compliant with standard semiconductor quality norms and offers performance consistency in demanding conditions.

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