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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | MMBFJ177LT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Sub Type | JFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Drain Source Voltage Vds | -25V dc |
| Maximum Drain Source Resistance Rds | 300Ω |
| Maximum Power Dissipation Pd | 225mW |
| Maximum Gate Source Voltage Vgs | 25V dc |
| Drain Source Current Ids | 1.5 to 20 mA |
onsemi MMBFJ177LT1G is a single type P-Channel JFET (junction field-effect transistor) designed specifically for surface mount applications. Its compact SOT-23 package makes it suitable for space-constrained industrial electronic circuits.
This JFET features a maximum drain-source voltage (Vds) of -25 V dc, accommodating moderate voltage switching or amplification tasks. Current handling ranges from 1.5 mA to 20 mA, providing flexibility for a variety of low-power signal processing use cases.
The device supports continuous power dissipation up to 225 mW, ensuring stable performance under typical operational stresses. It is designed for operation within a broad temperature range (-55°C to 150°C), making it suitable for demanding industrial and commercial electronic environments.
Physically, the transistor measures approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, making it ideal for high-density circuit boards in consumer electronics, instrumentation, and automation sectors.
Its 3-pin SOT-23 surface mount package supports automated assembly, reducing manufacturing costs and improving production efficiency. The MMBFJ177LT1G is primarily employed in discrete semiconductor applications such as analogue switches, amplifiers, and signal modulators.
Maximum drain-source voltage of -25 V dc. Drain current range from 1.5 to 20 mA. 3-pin SOT-23 surface mount package. Maximum power dissipation of 225 mW. Operating temperature range from -55°C to 150°C. Compact dimensions of 3.04 mm length and 1.4 mm width.
Maximum gate-source voltage of 25 V dc. Suitable for low power discrete semiconductor circuits. No automotive standard certification. Reliable P-channel JFET transistor from onsemi.
This transistor is ideal for use in industrial electronics, signal processing, telecommunications, instrumentation, and other commercial applications where reliable Discrete Semiconductor components are essential.
Explore more semiconductor and discrete component solutions on EnvMart to support your electronic design and manufacturing projects with quality and trusted brands like onsemi.
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