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onsemi Single Type P-Channel Junction Field-Effect Transistor JFET -25 V dc, 1.5 to 20 mA, 3-Pin Surface Mount MMBFJ177LT1G

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBFJ177LT1G
Width 1.4mm
Mount Type Surface
Configuration Single
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type JFET
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Drain Source Voltage Vds -25V dc
Maximum Drain Source Resistance Rds 300Ω
Maximum Power Dissipation Pd 225mW
Maximum Gate Source Voltage Vgs 25V dc
Drain Source Current Ids 1.5 to 20 mA

Key Features

  • Provides maximum drain-source voltage of -25 V dc suitable for signal switching.
  • Drain current ranges from 1.5 mA to 20 mA enabling versatile current handling.
  • Designed with 3-pin configuration for easy integration on PCBs.
  • Supports a maximum power dissipation of 225 mW for reliable operation.
  • Operates within a temperature range from -55°C to 150°C for various industrial environments.
  • Compact physical dimensions with length 3.04 mm, width 1.4 mm, and height 1.01 mm.
  • Surface mount type optimises PCB space and assembly efficiency.
  • Maximum gate-source voltage rating of 25 V dc ensures device safety.

Product Description

onsemi MMBFJ177LT1G is a single type P-Channel JFET (junction field-effect transistor) designed specifically for surface mount applications. Its compact SOT-23 package makes it suitable for space-constrained industrial electronic circuits.

This JFET features a maximum drain-source voltage (Vds) of -25 V dc, accommodating moderate voltage switching or amplification tasks. Current handling ranges from 1.5 mA to 20 mA, providing flexibility for a variety of low-power signal processing use cases.

The device supports continuous power dissipation up to 225 mW, ensuring stable performance under typical operational stresses. It is designed for operation within a broad temperature range (-55°C to 150°C), making it suitable for demanding industrial and commercial electronic environments.

Physically, the transistor measures approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, making it ideal for high-density circuit boards in consumer electronics, instrumentation, and automation sectors.

Its 3-pin SOT-23 surface mount package supports automated assembly, reducing manufacturing costs and improving production efficiency. The MMBFJ177LT1G is primarily employed in discrete semiconductor applications such as analogue switches, amplifiers, and signal modulators.

Maximum drain-source voltage of -25 V dc. Drain current range from 1.5 to 20 mA. 3-pin SOT-23 surface mount package. Maximum power dissipation of 225 mW. Operating temperature range from -55°C to 150°C. Compact dimensions of 3.04 mm length and 1.4 mm width.

Maximum gate-source voltage of 25 V dc. Suitable for low power discrete semiconductor circuits. No automotive standard certification. Reliable P-channel JFET transistor from onsemi.

This transistor is ideal for use in industrial electronics, signal processing, telecommunications, instrumentation, and other commercial applications where reliable Discrete Semiconductor components are essential.

Explore more semiconductor and discrete component solutions on EnvMart to support your electronic design and manufacturing projects with quality and trusted brands like onsemi.

onsemi Single Type P-Channel Junction Field-Effect Transistor JFET -25 V dc, 1.5 to 20 mA, 3-Pin Surface Mount MMBFJ177LT1G
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Frequently Asked Questions

The maximum drain-source voltage for this JFET is -25 V dc.

This model can handle a drain current ranging from 1.5 mA to 20 mA.

The physical dimensions of this model are approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The maximum power dissipation for this transistor is 225 mW.

It operates within a temperature range from -55°C to 150°C.

This transistor uses a 3-pin SOT-23 surface mount package.

The maximum gate-source voltage rating for this model is 25 V dc.

This model is suitable for applications such as analogue switches, amplifiers, and signal modulators.

This JFET has a pin count of 3.

This JFET has a P-channel type configuration.

The country of origin for this product is India.

The maximum drain-source resistance for this model is 300 Ω.

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