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Nexperia N-Channel MOSFET SOT-23 5.4 A, 20 V Enhancement 3-Pin PMV30UN2R

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Nexperia N-Channel MOSFET SOT-23 5.4 A, 20 V Enhancement 3-Pin PMV30UN2R

Name: Nexperia N-Channel MOSFET SOT-23 5.4 A, 20 V Enhancement 3-Pin PMV30UN2R
Brand: Nexperia
SKU: 230658
Price: 0.17 USD
Availability: InStock

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Category Discrete Semiconductor Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV30UN2R
Width	1.4mm
Mount Type	Surface
Series	PMV30UN2
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	5.4A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	100mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	6.2nC
Maximum Gate Source Voltage Vgs	12V

Key Features

Supports continuous drain current up to 5.4 A.
Operates with a maximum drain-source voltage of 20 V.
Features a compact SOT-23 surface mount package with 3 pins.
Utilizes enhancement mode channel technology with Trench MOSFET design.
Maximum power dissipation rated at 5 W.
Operates over a temperature range from -55°C to 150°C.
Maximum gate-source voltage rating of 12 V to ensure device protection.
Low threshold voltage for efficient switching performance.

Product Description

Nexperia PMV30UN2R is an N-Channel Enhancement Mode MOSFET in a compact 3-Pin SOT-23 surface-mount package, engineered using advanced Trench MOSFET technology. This transistor offers a maximum continuous drain current of 5.4 A and a maximum drain-source voltage of 20 V, making it well-suited for low voltage switching applications.

The device features very fast switching capabilities and a low threshold voltage, which enhances power efficiency in portable and embedded electronic designs. Its maximum power dissipation is rated at 5 W, supporting demanding operation while maintaining thermal stability.

Operating temperatures range from -55°C up to 150°C, allowing use in a broad spectrum of industrial and automotive electronic environments. The MOSFET's small footprint (3 mm length, 1.4 mm width, 1 mm height) and surface mount configuration enable compact PCB layouts.

This transistor is optimized for applications including LED drivers, low-side load switching, power management circuits, and other switching circuit designs where high reliability and quick response are critical. Manufactured in China, the device complies with standard semiconductor quality norms but does not carry specific automotive certifications.

Supports continuous drain current up to 5.4 A. Operates with maximum drain-source voltage of 20 V. Compact 3-pin SOT-23 surface mount package. Trench MOSFET technology enhances efficiency and reliability. Maximum power dissipation of 5 W ensures stable operation.

Wide operating temperature from -55°C to 150°C aids versatility. Suitable for LED drivers, power management, and switching circuits. Low threshold voltage for enhanced switching performance. Robust construction made in China.

Explore the Electronics & Electricals categories on EnvMart for more advanced MOSFET and semiconductor components for industrial, laboratory, automotive, and manufacturing applications.

Explore more products in our Discrete Semiconductor category.