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Vishay Silicon NPN Phototransistor Visible Light Infrared Spectrum Subminiature Surface 2-Pin 50mA Collector Current VEMT2520
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 1.8mm |
| Brand | Vishay |
| Dimensions | 2.3 x 2.3 x 2.8 mm |
| Height | 2.77mm |
| Length | 2.3mm |
| Model | VEMT2520 |
| Width | 2.3mm |
| Mount Type | Surface |
| Series | VEMT2520 |
| Maximum Operating Temperature | 100°C |
| Package Type | Subminiature |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Automotive Standard | AEC-Q101 |
| Peak Wavelength | 850nm |
| Spectrums Detected | Visible Light, Infrared |
| Angle of Half Sensitivity | ±15 ° |
| Collector Current | 50mA |
| Maximum Light Current | 9000μA |
| Maximum Dark Current | 100nA |
| Collector Emitter Voltage | 20V |
| Emitter Collector Voltage | 7V |
| Lead types | gull-wing (GW) or reverse gull-wing (RGW) |
Key Features
- Detects visible light and infrared spectrums with peak wavelength at 850nm.
- Maximum collector current of 50mA allows for moderate current handling.
- Compact subminiature package measuring 2.3 x 2.3 x 2.8 mm with dome lens.
- Fast response and high radiant sensitivity with ±15° angle of half sensitivity.
- Operates reliably from - 40°C to 100°C for robust industrial applications.
- Surface mount design with 2 pins using gull-wing or reverse gull-wing leads.
- Low dark current of 100nA minimizing noise in photodetection systems.
- Designed to RoHS compliance and AEC-Q101 automotive standard for quality assurance.
Product Description
Vishay VEMT2520 is a silicon NPN phototransistor designed for sensing visible and near-infrared light. Packaged in a subminiature surface mount 2-pin configuration, the device features a clear epoxy dome lens that ensures high radiant sensitivity. This component handles a maximum collector current of 50mA and operates effectively within a wide temperature range from - 40°C to 100°C, making it ideal for demanding industrial, laboratory, sensor, and electronic applications.
The phototransistor detects spectrums spanning visible light and infrared, peaking at 850nm wavelength, with a low maximum dark current of 100nA to reduce signal noise. Its angle of half sensitivity is ±15°, providing precise directional light detection. The compact footprint of 2.3 x 2.3 x 2.8 mm, together with gull-wing or reverse gull-wing leads, offers ease of integration into printed circuit boards for automated manufacturing.
Detects visible and near-infrared light with peak wavelength 850nm. Maximum collector current 50mA for moderate current load. Compact subminiature surface mount 2-pin package with dome lens. Wide operating temperature range of - 40°C to 100°C.
Low dark current of 100nA ensures high sensitivity and low noise. ±15° half sensitivity angle for directional detection. Complies with RoHS and automotive AEC-Q101 standards. Lead types include gull-wing or reverse gull-wing for PCB assembly.
This phototransistor is suited for electronic components, power and connectors, optoelectronics, sensor, and laboratory instrumentation applications where precision light detection is essential. Its high sensitivity and small size facilitate compact circuit designs. Explore more Vishay Phototransistors and optoelectronic devices within the industrial components category at EnvMart for diverse application needs.
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Frequently Asked Questions
The peak wavelength of the Vishay VEMT2520 phototransistor is 850nm, allowing it to detect both visible light and infrared spectrums.
This phototransistor has a maximum collector current of 50mA, enabling it to handle moderate current loads effectively.
The dimensions of the VEMT2520 are 2.3 x 2.3 x 2.8 mm, making it a compact subminiature surface mount device.
This model operates reliably within a wide temperature range of -40°C to 100°C, suitable for various industrial applications.
The VEMT2520 features a surface mount design, which allows for easy integration into printed circuit boards.
The angle of half sensitivity for this model is ±15°, providing precise directional light detection.
This phototransistor is available with gull-wing or reverse gull-wing lead types for PCB assembly.
The maximum dark current for the VEMT2520 is 100nA, which helps minimize noise in photodetection systems.
This phototransistor is designed to comply with RoHS regulations and the AEC-Q101 automotive standard for quality assurance.
The VEMT2520 features a single channel design, suitable for various sensing applications.
It can detect visible light and infrared spectrums, making it versatile for different applications.
The maximum collector emitter voltage for the VEMT2520 is 20V, allowing for a robust operation within specified limits.
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