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onsemi Small Signal PNP Transistor BC32740BU, -800 mA, -50 V, 3-Pin TO-92

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model BC32740BU
Width 4.19mm
Mount Type Through Hole
Series BC327
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 250
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor has a maximum power dissipation rating of 625 mW.
  • It features a minimum DC current gain (hFE) of 250 for efficient switching.
  • The maximum transition frequency is 100 MHz, suitable for high-frequency applications.
  • Operating temperature ranges up to 150°C to ensure reliability under industrial conditions.
  • Designed as a single transistor configuration with PNP polarity.
  • Maximum voltages include collector-base voltage (VCBO) of 50 V and emitter-base voltage (VEBO) of -5 V.
  • Pin count is 3, standard for discrete transistors.
  • No specific automotive or industry standard certifications are listed.

Product Description

onsemi BC32740BU is a small signal PNP bipolar junction transistor packaged in a 3-Pin TO-92 case, optimized for through-hole mounting. It provides a maximum collector current of -800 mA and a collector-emitter voltage of -50 V, making it suitable for general-purpose switching and amplification applications in electronic circuits.

This transistor offers a maximum power dissipation of 625 mW and a high current gain (hFE) of at least 250, ensuring efficient operation in low to moderate power applications. With a transition frequency of 100 MHz, it can be used in moderate frequency circuits.

The compact physical dimensions (20.95 mm height, 5.2 mm length, and 4.19 mm width) allow for space-efficient PCB designs. Designed with PNP polarity and single transistor configuration, this device facilitates versatile use in discrete semiconductor arrangements.

Key electrical parameters include maximum collector-base voltage of 50 V and maximum emitter-base voltage of -5 V. The transistor functions reliably up to an operating temperature of 150°C, suitable for industrial and commercial environments.

Though it does not conform to any specific automotive standards, its proven design and reliable performance make it highly suitable for electronics, power management, and signal processing applications. The TO-92 package provides an easy through-hole mounting option commonly used in prototyping and production.

This transistor is ideal for use in consumer electronics, automotive electronics circuits, industrial equipment, and general switching applications. Its compact size and robust electrical characteristics make it suitable for laboratory and manufacturing environments requiring precise small signal transistors.

Package format TO-92 ensures compatibility with standard mounting and packaging protocols for semiconductors. Use cases include amplification, switching, analog circuit design, and signal processing. Designed for reliable performance in commercial and industrial electronics assembly.

This onsemi BC32740BU bipolar transistor is part of the BC327 series, offering a range of PNP transistors for various applications. For more semiconductor components and related products, explore the Electronics & Electricals category on EnvMart for comprehensive selections tailored to industrial and commercial demands.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Transistor BC32740BU, -800 mA, -50 V, 3-Pin TO-92
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Frequently Asked Questions

The maximum collector current for this transistor is -800 mA.

It has a maximum power dissipation rating of 625 mW.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency applications.

The dimensions are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The maximum collector-emitter voltage (Vceo) is -50 V.

This transistor is designed for through-hole mounting.

The minimum DC current gain (hFE) is 250, which supports efficient switching.

The maximum emitter-base voltage (VEBO) is -5 V.

It can operate reliably up to a maximum temperature of 150°C.

This model is suitable for general-purpose switching and amplification applications in electronic circuits.

The transistor is packaged in a TO-92 case, which is standard for discrete transistors.

This model has a PNP polarity, designed for single transistor configurations.

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