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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 30.9mm |
| Length | 106.4mm |
| Model | FF200R12KT4HOSA1 |
| Width | 61.4mm |
| Mount Type | Clamp |
| Series | 62mmC |
| Maximum Operating Temperature | 150°C |
| Package Type | 62 mm Module |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | EN 61140 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 320A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 1100W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon FF200R12KT4HOSA1 N-Channel IGBT Module is a robust power switching semiconductor designed for high-voltage and high-current industrial applications. It features a 3-pin clamp mounting system, offering reliable mechanical and thermal contact with heat sinks for effective thermal management.
This module provides a maximum continuous collector current of 320 amperes and can withstand a maximum collector-emitter voltage of 1200 volts, making it suitable for demanding power electronics tasks. The device dissipates up to 1100 watts of power, allowing extended operation under heavy load conditions.
Operating across a broad temperature range from -40°C to 150°C, the module is engineered to perform in harsh industrial environments. Its maximum gate-emitter voltage rating of 20 volts ensures safe operation within specified electrical limits.
Mechanical dimensions of 106.4 mm by 61.4 mm by 30.9 mm correspond to the 62 mm C series package type, facilitating integration into existing systems. Compliance with EN 61140 standards guarantees electrical safety during use.
Applications for the FF200R12KT4HOSA1 include industrial motor drive inverter stages, renewable energy converters such as solar inverters, high-power switching assemblies for traction systems, and laboratory power electronics test benches. Its heavy current and high voltage ratings make it highly versatile for power control and conversion solutions.
This IGBT module supports 320 A maximum continuous collector current. Rated for 1200 V collector-emitter voltage enabling high-voltage operation. Clamp mounting system provides secure mechanical and thermal attachment. Wide operating temperature range from -40°C to 150°C.
3-pin N-channel device configuration. Maximum power dissipation of 1100 W for durable power handling. Maximum gate-emitter voltage limited to 20 V prevents damage. Complies with EN 61140 electrical safety standard. Dimensions: 106.4 mm length x 61.4 mm width x 30.9 mm height.
Ideal for industrial motor drives, renewable energy, and power conversion applications. Explore more Infineon IGBT Modules and semiconductor solutions in EnvMart's extensive industrial catalog for power electronics.
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