onsemi High Voltage NPN Transistor 500 mA Maximum Collector Current 300 V Collector-Emitter Voltage 3-Pin TO-92 MPSA42

The onsemi MPSA42 is a high voltage NPN bipolar junction transistor (BJT) designed for switching and amplification tasks in electronic circuits. Housed in a compact and rugged 3-pin TO-92 package, it features a maximum collector current of 500 mA and a collector-emitter voltage rating of 300 V. This design allows it to handle substantial power dissipation of up to 625 mW, making it suitable for a variety of discrete semiconductor applications.

Its single transistor configuration with NPN polarity and through-hole mount type ensures compatibility with traditional PCB layouts. The MPSA42 has a minimum DC current gain (hFE) of 25 providing reliable signal amplification without compromising stability. Its maximum collector-base voltage is rated at 300 V, while the emitter-base voltage is limited to 6 V, supporting robust switching performance.

Designed for a wide temperature range from -55°C to 150°C, the transistor operates efficiently in demanding environments. The maximum transition frequency of 50 MHz allows for applications requiring moderate switching speeds. Its physical dimensions, including a height of 20.95 mm, width of 4.19 mm and length of 5.2 mm, aid in compact circuit designs.

The MPSA42 transistor is commonly used in power amplification, driver stages, and high voltage switching in industrial, commercial, and laboratory electronic assemblies. Its reliable characteristics make it an essential component for semiconductor discrete solutions.

This transistor supports a maximum power dissipation of 625 mW for reliable performance. It has a minimum DC current gain (hFE) of 25 ensuring adequate amplification. The device operates over a temperature range from -55°C to 150°C.

Maximum transition frequency of 50 MHz suits moderate frequency applications. It features single transistor configuration with NPN polarity and through-hole mount type. Maximum voltages are 300 V (collector-emitter and collector-base) and 6 V emitter-base.

Compact dimensions with height 20.95 mm, width 4.19 mm, length 5.2 mm. Ideal for power amplification, switching, and driver circuits in electronic systems. Explore onsemi transistor products and other high-quality Bipolar Transistors in the EnvMart catalog for your electronics design and manufacturing needs.