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onsemi Silicon Junction Switching Diode Single 1 A 600 V Surface Mount DO-214AC RS1J

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.2mm
Length 4.75mm
Model RS1J
Width 2.95mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AC
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Power Dissipation Pd 1.19W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 250ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • Supports a maximum forward current of 1 A for reliable operation.
  • Capable of withstanding a maximum peak reverse repetitive voltage of 600 V.
  • Surface mount design in a compact DO-214AC package type with 2 pins.
  • Maximum power dissipation of 1.19 W ensures durability under load.
  • Peak non-repetitive forward surge current rating of 30 A for transient tolerance.
  • Operating temperature range from -55°C minimum to 150°C maximum allows usage in diverse environments.
  • Low peak reverse recovery time of 250 ns for improved switching performance.
  • Maximum forward voltage of 1.3 V minimizes energy loss in circuits.

Product Description

onsemi RS1J is a single silicon junction switching diode designed to operate with a maximum forward current of 1 ampere and a peak reverse repetitive voltage rating of 600 volts. It is housed in a surface mount DO-214AC package that features two pins, allowing easy integration into compact electronic circuits.

This diode supports a peak non-repetitive forward surge current of 30 amperes, providing resilience to transient current spikes. It dissipates a maximum power of 1.19 watts and exhibits a low peak reverse recovery time of 250 nanoseconds, making it suitable for high-speed switching applications.

The device operates reliably in a wide temperature range from -55°C to 150°C, ensuring functionality in harsh industrial, automotive, and electronic environments. Its maximum forward voltage is 1.3 volts, which contributes to efficient energy management within circuits.

The physical dimensions are compact with a length of 4.75 mm, width of 2.95 mm, and height of 2.2 mm, fitting well in space-constrained PCB designs. The silicon junction construction offers stable electrical performance for rectification and switching use cases.

Supports a maximum forward current of 1 A for reliable operation. Capable of withstanding a maximum peak reverse repetitive voltage of 600 V. Surface mount design in a compact DO-214AC package type with 2 pins. Maximum power dissipation of 1.19 W ensures durability under load.

Peak non-repetitive forward surge current rating of 30 A for transient tolerance. Operating temperature range from -55°C minimum to 150°C maximum allows usage in diverse environments. Low peak reverse recovery time of 250 ns for improved switching performance.

Maximum forward voltage of 1.3 V minimizes energy loss in circuits. Compact dimensions with length 4.75 mm, width 2.95 mm, and height 2.2 mm. Silicon junction type diode ideal for rectification and switching applications.

This diode is suitable for industrial electronics, power supply circuits, and automotive applications that require efficient switching and rectification with high reliability. The onsemi RS1J diode supports enhanced performance and durability in demanding operating conditions.

Explore more electronic components and Switching Diodes on EnvMart for your design and manufacturing needs.

onsemi Silicon Junction Switching Diode Single 1 A 600 V Surface Mount DO-214AC RS1J
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Frequently Asked Questions

The RS1J diode supports a maximum forward current of 1 A for reliable operation.

It is capable of withstanding a maximum peak reverse repetitive voltage of 600 V.

The physical dimensions of this model are 4.75 mm in length, 2.95 mm in width, and 2.2 mm in height.

The maximum power dissipation for the RS1J diode is 1.19 W.

This diode operates reliably in a temperature range from -55°C to 150°C.

The RS1J diode has a peak non-repetitive forward surge current rating of 30 A.

The peak reverse recovery time is 250 ns, which enhances its switching performance.

It is housed in a surface mount DO-214AC package type with 2 pins.

The maximum forward voltage is 1.3 V, which helps minimize energy loss in circuits.

This diode is suitable for industrial electronics, power supply circuits, and automotive applications that require efficient switching and rectification.

The RS1J features a single diode configuration.

The RS1J is a silicon junction switching diode, designed for rectification and switching applications.

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