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STMicroelectronics MDmesh N-Channel MOSFET, 5 A, 600 V Enhancement Mode, 3-Pin TO-220 STF7NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF7NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 20W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Utilizes MDmesh technology for high performance.
- Operates in enhancement mode for efficient switching.
- Maximum power dissipation of 20W supports demanding applications.
- Wide operating temperature range from -55°C to 150°C.
- Pin count of 3 suitable for through-hole mounting.
- Low maximum drain source resistance of 900mΩ for reduced losses.
- Typical gate charge of 14nC ensures fast switching.
- Maximum gate source voltage rating is ±25V, enhancing reliability.
Product Description
The STMicroelectronics STF7NM60N is a high-performance MDmesh N-Channel MOSFET designed for power switching applications requiring robust electrical characteristics. This MOSFET supports a maximum continuous drain current of 5A and can handle a maximum drain-source voltage of 600V. Packaged in a compact 3-pin TO-220 form factor, it is intended for through-hole mounting and is suitable for various industrial and commercial electronics projects.
Its enhancement mode channel operation ensures efficient control of the device with a low maximum drain-source resistance of 900mΩ, minimizing power loss during conduction. The device can handle power dissipation of up to 20W, making it capable of supporting moderate power loads. It operates reliably over a wide temperature range from -55°C up to 150°C, suitable for demanding environments.
The typical gate charge of 14nC at Vgs allows for swift switching, enhancing the overall efficiency of circuits utilizing this MOSFET. The maximum gate-source voltage ratings of -25V and +25V provide ample protection margin against voltage spikes. The forward voltage drop is 1.3V, which assists in reducing conduction losses under load.
Physical dimensions of the MOSFET are 10.4mm in length, 4.6mm in width, and 16.4mm in height, ensuring ease of integration into PCB designs with space constraints. This device is ideal for applications in industrial electronics, power supplies, motor control, and other environments requiring reliable high-voltage switching components.
The product does not have special automotive certifications, but its rugged design and performance parameters make it suitable for various commercial and industrial uses. Utilizes MDmesh technology for high performance. Operates in enhancement mode for efficient switching.
Maximum power dissipation of 20W supports demanding applications. Wide operating temperature range from -55°C to 150°C. Pin count of 3 suitable for through-hole mounting. Low maximum drain source resistance of 900mΩ for reduced losses.
Typical gate charge of 14nC ensures fast switching. Maximum gate source voltage rating is ±25V, enhancing reliability. Forward voltage drop of 1.3V optimizes conduction efficiency. Compact dimensions: 10.4mm x 4.6mm x 16.4mm.
Explore more STMicroelectronics MOSFET products and electrical components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5A.
It can handle a maximum drain-source voltage of 600V.
This MOSFET supports a maximum power dissipation of 20W.
The typical gate charge is 14nC at Vgs.
The physical dimensions are 10.4mm in length, 4.6mm in width, and 16.4mm in height.
The maximum gate-source voltage rating is ±25V.
It is designed for through-hole mounting with a pin count of 3.
It operates reliably over a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance is 900mΩ.
The forward voltage drop is 1.3V, which helps reduce conduction losses.
This model utilizes an N-channel configuration in enhancement mode.
The country of origin for this device is India.
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