STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220FP STF13NM60N

STMicroelectronics STF13NM60N MDmesh N-Channel Enhancement Mode MOSFET offers high performance with an 11 Ampere maximum continuous drain current and 600 Volt maximum drain-source voltage in a compact TO-220FP 3-pin package.

Built with the second generation MDmesh technology, this MOSFET combines a vertical structure and a unique strip layout, delivering exceptionally low on-resistance of approximately 280 mOhm typical and low gate charge of 30 nC. These features make it ideal for high-efficiency power converters and demanding industrial applications.

The device supports operation over a wide temperature range from -55°C to 150°C and dissipates up to 25 Watts of power, ensuring durability under heavy loads. With a maximum gate-source voltage of ±25 V and a typical forward voltage drop of 1.2 V, the MOSFET is well suited for reliable switching and control in power electronics circuits.

Its through-hole TO-220FP package ensures easy mounting and electrical connectivity with three pins, measuring 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width. Common applications include industrial power supplies, motor drives, switching power converters, and other electronic systems requiring efficient power switching and control.

MDmesh II technology for low on-resistance. High continuous drain current of 11 A. 600 V drain-source voltage rating. Low gate charge ensuring efficient switching. Robust power dissipation capability of 25 W. Wide operating temperature range (-55°C to 150°C).

Compact TO-220FP 3-pin through-hole package. Typical forward voltage of 1.2 V. Ideal for high-efficiency power converters and industrial electronics. Explore EnvMart’s extensive range of semiconductor devices and MOSFETs for high-performance electronic component needs.