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STMicroelectronics STripFET N-Channel MOSFET 15 A, 200 V Enhancement, 3-Pin TO-220 STF19NF20
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF19NF20 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
Key Features
- This device features a maximum continuous drain current of 15 amperes.
- The maximum drain-source voltage rating is 200 volts.
- It has a low maximum drain-source resistance of 160 milliohms for efficient switching.
- The MOSFET operates in enhancement mode with a typical gate charge of 24 nanocoulombs at Vgs.
- Maximum power dissipation is rated at 25 watts with operational temperature range from -55°C to 150°C.
- The device features a forward voltage of 1.6 volts and maximum gate-source voltage rating of ±20 volts.
- The package dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
- Designed for industrial and electronic power management applications requiring reliable N-channel MOSFETs.
Product Description
STMicroelectronics STF19NF20 N-Channel MOSFET is a high-performance power transistor designed for efficient switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 15 A and a maximum drain-source voltage of 200 V, this enhancement mode MOSFET provides superior conduction efficiency with a low Rds(on) of 160 mΩ, reducing power losses and heat generation.
Encapsulated in a robust 3-pin TO-220 package for through-hole mounting, it offers excellent thermal performance with a maximum power dissipation of 25 watts and an operating temperature range from -55°C up to 150°C, suitable for demanding industrial environments.
The device exhibits a typical gate charge of 24 nC at Vgs, enabling fast switching speeds crucial for high-frequency power electronics, while the forward voltage of 1.6 V ensures reliable operation under load. The maximum gate-source voltage tolerance of ±20 V safeguards the MOSFET from voltage spikes during operation.
Compact package dimensions, measuring 16.4 mm height, 10.4 mm length, and 4.6 mm width, allow for efficient PCB space utilization in electronic assemblies.
This N-channel STripFET MOSFET is ideally suited for applications in power management, motor drives, power supplies, and other industrial control systems requiring robust, reliable semiconductor components.
This device features a maximum continuous drain current of 15 amperes. The maximum drain-source voltage rating is 200 volts. It has a low maximum drain-source resistance of 160 milliohms for efficient switching. The MOSFET operates in enhancement mode with a typical gate charge of 24 nanocoulombs at Vgs.
Maximum power dissipation is rated at 25 watts with operational temperature range from -55°C to 150°C. The device features a forward voltage of 1.6 volts and maximum gate-source voltage rating of ±20 volts. The package dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
Designed for industrial and electronic power management applications requiring reliable N-channel MOSFETs. Explore the wide range of STMicroelectronics discrete semiconductors at EnvMart to find reliable components for your electronics projects and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 amperes.
This MOSFET has a maximum drain-source voltage rating of 200 volts.
The maximum power dissipation for this unit is rated at 25 watts.
It operates within a temperature range of -55°C to 150°C.
This model is encapsulated in a 3-pin TO-220 package for through-hole mounting.
The typical gate charge at Vgs is 24 nanocoulombs.
The maximum gate-source voltage rating is ±20 volts.
The forward voltage for this MOSFET is 1.6 volts.
It has a low maximum drain-source resistance of 160 milliohms.
This model features a pin count of 3.
It uses an N-channel configuration, operating in enhancement mode.
This MOSFET is designed for power management, motor drives, and power supplies in industrial applications.
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