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STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 40 W, TO-252 Package STD16NF06T4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD16NF06T4
Width 6.2mm
Mount Type Surface
Series STripFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 70mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 40W
Typical Gate Charge Qg @ Vgs 14.1nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Features a compact TO-252 package ideal for surface mounting.
  • Maximum continuous drain current of 16 A for robust power handling.
  • Low maximum drain-source resistance of 70 mΩ enhances efficiency.
  • High maximum power dissipation of 40 W allows reliable thermal management.
  • Operates between -55°C and 175°C for versatile application ranges.
  • Typical gate charge of 14.1 nC supports fast switching performance.
  • Maximum gate-source voltage rating of ±20 V ensures safe operation.
  • Forward voltage of 1.5 V under specified conditions.

Product Description

STMicroelectronics STD16NF06T4 is an N-Channel MOSFET optimized for switching and amplification with a maximum continuous drain current of 16 A and a maximum drain-source voltage of 60 V. This device is housed in a compact TO-252 surface-mount package facilitating easy integration into electronic circuits.

With a maximum power dissipation of 40 W, the MOSFET provides robust thermal resilience suitable for demanding industrial, commercial, and consumer electronic applications. Its low drain-source resistance of 70 mΩ supports energy-efficient operation, while the typical gate charge of 14.1 nC enables fast switching for high-frequency circuits.

Operating temperature range from -55°C to 175°C ensures reliability under wide environmental conditions. The maximum gate-source voltage of ±20 V accommodates a variety of drive voltages for flexible circuit designs. Measuring just 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, this device supports space-saving layouts.

STMicroelectronics' STripFET technology enhances conduction performance to reduce power loss and improve system efficiency. It is suitable for power management, motor control, and amplifier stages in industrial automation, consumer electronics, and automotive systems not requiring automotive certification.

Compact TO-252 surface-mount package for dense PCB designs. High drain current capability of 16 A for robust power handling. Low Rds(on) reduces conduction losses in circuits. High thermal dissipation rating supports demanding applications.

Wide operating temperature range ensures reliability across conditions. Fast switching with typical gate charge of 14.1 nC. Safe gate voltage ratings ensure durability. Small dimensions allow efficient board space utilization.

STripFET technology enhances performance and efficiency.

This N-Channel MOSFET from STMicroelectronics is an essential component for electronic engineers seeking efficient and reliable switching devices for power control and amplification.

Explore more semiconductor and MOSFET products in the Electronics & Electricals category at EnvMart for comprehensive industrial and electronic system solutions.

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 40 W, TO-252 Package STD16NF06T4
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Frequently Asked Questions

The maximum continuous drain current of this model is 16 A.

The maximum drain-source voltage for this MOSFET is 60 V.

This N-Channel MOSFET is housed in a TO-252 package, which is suitable for surface mounting.

It operates within a temperature range of -55°C to 175°C.

The typical gate charge for this MOSFET is 14.1 nC.

The maximum power dissipation for this model is 40 W.

The dimensions of this model are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

The maximum gate-source voltage rating for this MOSFET is ±20 V.

The maximum drain-source resistance is 70 mΩ.

This model is suitable for power management, motor control, and amplifier stages in various electronic applications.

This MOSFET has 3 pins.

This model utilizes an N-channel type.

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