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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD16N65M5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 279mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
The STMicroelectronics STD16N65M5 is an N-Channel MDmesh M5 series MOSFET optimized for high-power applications requiring efficient energy management. This enhancement mode MOSFET supports a continuous drain current of 12 A and a high drain-source voltage of 650 V, making it suitable for demanding power electronics.
Encapsulated in a 3-pin TO-252 surface-mount package measuring 6.6 mm length, 6.2 mm width, and 2.4 mm height, the device is designed for compact system integration. The MOSFET exhibits a low drain-source resistance of 279 mΩ, which combined with low gate charge of 31 nC, reduces conduction and switching losses.
Its maximum power dissipation is rated at 90 W, enabling reliable operation under high thermal loads. The device supports a gate-source voltage range from -25 V to +25 V and maintains stable performance across a wide temperature range from -55°C to 150°C. Forward voltage is typically 1.5 V, contributing to efficient power conversion.
These features make the STD16N65M5 MOSFET ideal for applications in industrial power supplies, energy-conscious solar power systems, PWM controllers, and electronic lighting controls. Its robust design enables it to handle hard switching demands while maintaining energy efficiency and system reliability.
Low on-state losses per silicon area combined with low gate charge for energy-conscious designs. Optimized for high-power Power Factor Correction (PFC) and Pulse Width Modulation (PWM) topologies. Designed for compact, reliable hard switching applications.
Surface mount TO-252 package facilitates efficient PCB layout and heat dissipation. Wide operating temperature range ensures suitability in harsh industrial environments. Supports industrial, laboratory, construction, and commercial electronic systems.
Explore more power semiconductor components from STMicroelectronics and enhance your designs with MDmesh M5 series technology, optimized for superior switching performance and reliability.
Explore more products in our MOSFETs category.
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