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STMicroelectronics MDmesh N-Channel MOSFET 8 A 1.5 kV Enhancement 3-Pin TO-247 STW9N150
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW9N150 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 1.5kV |
| Maximum Drain Source Resistance Rds | 2.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 320W |
| Typical Gate Charge Qg @ Vgs | 89.3nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports maximum continuous drain current up to 8 A for robust operation.
- Handles maximum drain-source voltage of 1.5 kV suitable for high-voltage applications.
- Features low maximum drain-source resistance of 2.5 ohms to minimize power losses.
- Operates efficiently with an enhancement mode channel and forward voltage of 1.2 V.
- Designed for through hole mounting with a 3-pin TO-247 package ensuring easy integration into circuits.
- Capable of operating between -55°C and 150°C for diverse environmental conditions.
- Maximum power dissipation rating of 320 W to handle demanding loads.
- Typical gate charge of 89.3 nC at specified gate-source voltage for optimized switching.
Product Description
STMicroelectronics STW9N150 is an advanced N-Channel MDmesh™ MOSFET transistor designed for high voltage and high current power switching applications. Housed in a durable 3-Pin TO-247 package, it supports a continuous drain current of 8 A and a drain-source voltage rating of 1.5 kV, making it ideal for industrial, power supply, and energy management systems.
This device leverages an enhancement mode channel to provide efficient conduction with a maximum drain-source resistance of only 2.5 ohms, reducing conduction losses significantly. With a forward voltage of 1.2 V, it provides reliable switching performance at varying load conditions.
The STW9N150 MOSFET supports a wide operating temperature range from -55°C to 150°C, making it suitable for use in harsh environments such as automotive electronics, manufacturing automation, and power converters. The typical gate charge of 89.3 nC at specified gate-source voltage ensures rapid switching and minimal gate drive power consumption.
The maximum power dissipation of 320 W empowers the component to handle high power loads without compromising durability. It is designed for through-hole mounting, facilitating ease of assembly and maintenance in electronic designs.
Maximum continuous drain current: 8 A. Drain-source voltage rating: 1.5 kV. Drain-source resistance: 2.5 Ω maximum. Enhancement mode channel operation. Typical forward voltage: 1.2 V. Operating temperature range from -55°C to 150°C.
Maximum power dissipation: 320 W. Typical gate charge: 89.3 nC. Gate-source voltage range: -30 V to +30 V.
This MOSFET is widely used in industrial power management, renewable energy systems, motor control electronics, and other demanding applications requiring efficient power switching and thermal stability. Its robust design from STMicroelectronics ensures reliability, high performance, and integration ease.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A, allowing for robust operation in various applications.
It has a maximum drain-source voltage rating of 1.5 kV, making it suitable for high-voltage applications.
The maximum drain-source resistance is 2.5 ohms, which helps minimize power losses during operation.
The typical gate charge at the specified gate-source voltage is 89.3 nC, optimizing switching efficiency.
This MOSFET operates efficiently within a temperature range of -55°C to 150°C, suitable for diverse environmental conditions.
It is designed for through-hole mounting, facilitating easy integration into circuits.
The maximum power dissipation rating is 320 W, allowing it to handle demanding loads effectively.
The typical forward voltage is 1.2 V, providing reliable switching performance.
This model features a 3-pin configuration, which is standard for its TO-247 package.
The channel type is N-channel, designed for enhancement mode operation.
It belongs to the MDmesh series, which is known for its high voltage and high current capabilities.
The maximum gate-source voltage is -30 V to +30 V, allowing for flexible gate drive configurations.
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