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STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V Enhancement Mode, 3-Pin TO-220 Package STP65NF06

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP65NF06
Width 4.6mm
Mount Type Through Hole
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 60A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 14Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 54nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Features an enhancement mode channel for efficient switching.
  • Encapsulated in a 3-pin TO-220 through-hole package for easy mounting.
  • Maximum power dissipation rated at 110 W for high-performance applications.
  • Operates reliably between -55°C and 175°C environmental temperatures.
  • Ultra-low typical gate charge of 54 nC ensuring low switching losses.
  • Maximum drain-source resistance of 14 milliohms reduces conduction losses.
  • Maximum gate-source voltage supports ±20 V tolerance for gate control flexibility.
  • Designed without automotive certification but suitable for general industrial electronics.

Product Description

STMicroelectronics STP65NF06 STripFET II N-Channel MOSFET is a high-performance discrete semiconductor designed to handle demanding industrial and electronic applications requiring robust switching capabilities.

This device supports a maximum continuous drain current of 60 amps and a maximum drain-source voltage of 60 volts in enhancement mode, ensuring efficient control and power management in circuits.

Its TO-220 package with 3 pins facilitates through-hole mounting, making it suitable for various PCB designs in power electronics, including power supplies, motor controls, and industrial automation.

The MOSFET features ultra-low gate charge (54 nC typical) which reduces switching losses, enhancing efficiency in high-frequency switching applications. It has a maximum drain-source resistance (Rds(on)) of 14 milliohms, which minimizes conduction losses and heat generation.

Rated for operation over a wide temperature range from -55°C to +175°C, this MOSFET ensures reliability under harsh environmental conditions. Educational and prototype designers can also benefit from its compact size and robust power dissipation capacity of 110 W, supporting stable performance in high load scenarios.

Features an enhancement mode channel for efficient switching. Encapsulated in a 3-pin TO-220 through-hole package for easy mounting. Maximum power dissipation rated at 110 W for high-performance applications. Operates reliably between -55°C and 175°C environmental temperatures.

Ultra-low typical gate charge of 54 nC ensuring low switching losses. Maximum drain-source resistance of 14 milliohms reduces conduction losses. Maximum gate-source voltage supports ±20 V tolerance for gate control flexibility.

Compact dimensions: height 15.75 mm, length 10.4 mm, width 4.6 mm. Designed without automotive certification but suitable for general industrial electronics. Forward voltage of 1.5 V ensures efficient current flow in conduction mode.

This MOSFET is ideal for use in industrial electronics, power supplies, motor controllers, and other applications requiring high switching speed and low power loss. Discover a wide range of discrete semiconductors including MOSFETs by browsing the Electronics & Electricals category at EnvMart.

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V Enhancement Mode, 3-Pin TO-220 Package STP65NF06
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Frequently Asked Questions

The maximum continuous drain current for this model is 60 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

It features a typical gate charge of 54 nC, which helps reduce switching losses.

The dimensions of the TO-220 package are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

The maximum power dissipation for this model is rated at 110 W, suitable for high-performance applications.

It operates reliably within a temperature range of -55°C to 175°C.

The maximum drain-source resistance (Rds(on)) is 14 milliohms, which minimizes conduction losses.

This model uses an N-channel enhancement mode for efficient switching.

The maximum gate-source voltage supported is ±20 V, providing flexibility for gate control.

It is suitable for use in industrial electronics, power supplies, and motor controllers that require high switching speed.

The TO-220 package has 3 pins, facilitating through-hole mounting.

The forward voltage of this MOSFET is 1.5 V, ensuring efficient current flow in conduction mode.

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