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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP65NF06 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STP65NF06 STripFET II N-Channel MOSFET is a high-performance discrete semiconductor designed to handle demanding industrial and electronic applications requiring robust switching capabilities.
This device supports a maximum continuous drain current of 60 amps and a maximum drain-source voltage of 60 volts in enhancement mode, ensuring efficient control and power management in circuits.
Its TO-220 package with 3 pins facilitates through-hole mounting, making it suitable for various PCB designs in power electronics, including power supplies, motor controls, and industrial automation.
The MOSFET features ultra-low gate charge (54 nC typical) which reduces switching losses, enhancing efficiency in high-frequency switching applications. It has a maximum drain-source resistance (Rds(on)) of 14 milliohms, which minimizes conduction losses and heat generation.
Rated for operation over a wide temperature range from -55°C to +175°C, this MOSFET ensures reliability under harsh environmental conditions. Educational and prototype designers can also benefit from its compact size and robust power dissipation capacity of 110 W, supporting stable performance in high load scenarios.
Features an enhancement mode channel for efficient switching. Encapsulated in a 3-pin TO-220 through-hole package for easy mounting. Maximum power dissipation rated at 110 W for high-performance applications. Operates reliably between -55°C and 175°C environmental temperatures.
Ultra-low typical gate charge of 54 nC ensuring low switching losses. Maximum drain-source resistance of 14 milliohms reduces conduction losses. Maximum gate-source voltage supports ±20 V tolerance for gate control flexibility.
Compact dimensions: height 15.75 mm, length 10.4 mm, width 4.6 mm. Designed without automotive certification but suitable for general industrial electronics. Forward voltage of 1.5 V ensures efficient current flow in conduction mode.
This MOSFET is ideal for use in industrial electronics, power supplies, motor controllers, and other applications requiring high switching speed and low power loss. Discover a wide range of discrete semiconductors including MOSFETs by browsing the Electronics & Electricals category at EnvMart.
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