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STMicroelectronics MDmesh N-Channel MOSFET, 14 A Continuous Drain Current, 500 V Drain Source Voltage STP19NM50N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP19NM50N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 14 amperes suitable for high power applications.
- Drain-source voltage rating of 500 volts ensures reliable high voltage switching.
- 3-pin TO-220 package designed for efficient heat dissipation and easy mounting.
- Enhancement type channel mode for efficient MOSFET transistor operation.
- Maximum power dissipation of 110 watts supports robust thermal handling.
- Operating temperature range from -55°C to 150°C for diverse environmental conditions.
- Typical gate charge of 34 nanocoulombs supports fast switching capabilities.
- Forward voltage of 1.5 volts ensuring low conduction losses.
Product Description
STMicroelectronics presents the STP19NM50N, a MDmesh series N-Channel MOSFET designed for high power electronic circuits. This device features a maximum continuous drain current of 14 amperes and a maximum drain-source voltage of 500 volts, operating in enhancement mode to provide efficient switching performance.
The component is housed in a 3-pin TO-220 package which facilitates through-hole mounting and effective heat dissipation essential for high-power applications. Power dissipation capability reaches up to 110 watts allowing it to operate reliably under demanding thermal conditions.
It is engineered to function over a wide temperature range from -55°C to 150°C, making it suitable for industrial, commercial, and automotive electronic systems that demand robust and reliable performance. The typical gate charge of 34 nC contributes to rapid switching, thus increasing the efficiency of power management circuits.
The maximum gate-source voltage is rated at ±25 volts, enabling stable operation without risking gate damage. Forward voltage is low at 1.5 volts, minimizing conduction losses during operation, critical in power-sensitive designs.
Dimensions of this MOSFET are compact: 15.75 mm height, 10.4 mm length, and 4.6 mm width, making it easy to integrate into circuit boards with spatial constraints. Maximum continuous drain current of 14 A allows safe high current usage.
500 V maximum drain-source voltage ensures suitability for high voltage circuits. 3-pin TO-220 package supports easy mounting and heat management. Enhancement mode operation promotes high efficiency in switching applications.
110 W maximum power dissipation supports heavy load conditions. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 34 nC enables fast switching speeds. Gate-source voltage limits of ±25 V protect device integrity.
Low forward voltage of 1.5 V reduces conduction losses. Compact physical dimensions for versatile PCB layouts. This STMicroelectronics MDmesh MOSFET is widely used in power supplies, motor control, automotive electronics, and industrial systems requiring reliable power switching devices.
Explore EnvMart's extensive catalog of semiconductor components for additional STMicroelectronics MOSFETs and related power management products suitable for diverse industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 amperes, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 500 volts, ensuring reliable operation in high voltage circuits.
The dimensions of this model are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, allowing for easy integration into circuit boards.
It is housed in a 3-pin TO-220 package, which supports through-hole mounting and efficient heat dissipation.
The operating temperature range for this model is from -55°C to 150°C, making it suitable for diverse environmental conditions.
The typical gate charge is 34 nanocoulombs, which supports fast switching capabilities in power management applications.
This model can handle a maximum power dissipation of 110 watts, supporting robust thermal handling in demanding applications.
The forward voltage is 1.5 volts, which helps to minimize conduction losses during operation.
This MOSFET operates in enhancement mode, which promotes efficient switching performance in electronic circuits.
The maximum gate-source voltage is rated at ±25 volts, ensuring stable operation without risking gate damage.
It is widely used in power supplies, motor control, automotive electronics, and industrial systems that require reliable power switching devices.
The maximum drain-source resistance is rated at 250 mΩ, contributing to its efficiency in power management applications.
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