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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD40NF10 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 46.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STD40NF10 is a high-performance STripFET™ N-Channel MOSFET designed for power switching applications with a maximum continuous drain current of 50 A and a drain-source voltage of 100 V. Packaged in a compact 3-pin TO-252 surface mount format, it enables efficient use of PCB space and reliable thermal management.
This MOSFET uses enhancement mode channel technology to provide low conduction losses with a maximum drain-source resistance of 28 milliohms. It delivers robust power handling capabilities with a maximum power dissipation of 125 watts and maintains stable operation across a wide temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and power management applications.
The device's typical gate charge of 46.5 nC supports fast switching speeds, while the rated maximum gate-source voltage of ±20 volts safeguards against gate overstress. The forward voltage drop of 1.5 volts further improves operational efficiency by minimizing power loss.
Its dimensions measure 6.6 mm length, 6.2 mm width, and 2.4 mm height, which fits well into dense circuit boards requiring high current throughput and voltage rating.
This MOSFET is widely used in industrial power supplies, motor control circuits, DC-DC converters, and other semiconductor applications where reliable and efficient switching is critical.
This MOSFET features a low 28 milliohm drain-source resistance for efficient operation. Designed with an enhancement mode channel type for controlled switching. Supports a maximum power dissipation of 125 watts for robust applications.
Operates within a temperature range from -55°C to +175°C suitable for harsh environments. Typical gate charge is 46.5 nC ensuring fast switching speeds. Maximum gate-source voltage rating of ±20 volts preserves device integrity.
Compact TO-252 surface mount package with 3 pins ideal for space-saving PCB designs. Forward voltage drop is 1.5 V enhancing power efficiency. Explore more semiconductor and MOSFET options at EnvMart for all your industrial and manufacturing electronics component needs.
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