Infineon N-Channel IGBT Module 300 A 1200 V 5-Pin 62 mm Module Clamp BSM200GA120DN2HOSA1

Infineon BSM200GA120DN2HOSA1 is an advanced N-Channel Insulated Gate Bipolar Transistor (IGBT) Module engineered for high-efficiency power switching applications. It supports a continuous collector current of 300 A and withstands a maximum collector emitter voltage of 1200 V, providing reliable performance under demanding electrical loads.

This 62 mm clamp-mounted module features a 5-pin design and is constructed with N-Channel TrenchSTOP technology that offers low switching losses, suitable for frequencies up to 60 kHz. Its maximum power dissipation of 1550 W equips it to handle significant thermal loads in industrial environments.

Physical dimensions measure 106.4 mm in length, 61.4 mm in width, and 36.5 mm in height, enabling versatile integration into power electronics systems. The module operates efficiently within a broad temperature range from -40°C to 150°C, ensuring stability in harsh climatic conditions.

The maximum collector emitter saturation voltage of 3.7 V supports efficient conduction, while the gate emitter voltage rating of ±20 V provides precise control during switching operations. It meets DIN humidity Category F and IEC climatic Category 40 / 125 / 56 standards, guaranteeing durability and long-term reliability.

Infineon’s IGBT Modules span multiple package styles including various ECONOPACK series and PrimePACK half-bridge modules, applicable to industrial, commercial, automotive, construction, and agricultural vehicle power electronics. The BSM200GA120DN2HOSA1 model is ideal for use in inverters, uninterruptible power supplies (UPS), and industrial drives where performance and reliability are critical.

The module uses N-Channel TrenchSTOP technology suitable for high-frequency switching up to 60 kHz. It has a 5-pin configuration and clamp mounting for secure installation. Maximum power dissipation is 1550 W supporting robust performance.

The module dimensions are 106.4 mm length, 61.4 mm width, and 36.5 mm height. Operates reliably in temperature range from -40°C to 150°C, suitable for industrial applications. Maximum collector emitter saturation voltage is 3.7 V for efficient conduction.

Gate emitter voltage tolerance is ±20 V ensuring stable switching control. The product complies with DIN humidity Category F and IEC climatic Category 40 / 125 / 56 standards. Designed for industrial, commercial, construction, agricultural vehicle power electronics, inverters, UPS, and industrial drives.

This module is a crucial component in modern power electronics, delivering efficiency and durability required for demanding applications. Explore a wide range of Infineon semiconductor products and related modules for enhanced power solutions on EnvMart.