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DiodesZetex Switching Diode Common Cathode 40A 3-Pin 300V TO-220 SBR40U300CT
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 16.51mm |
| Length | 10.66mm |
| Model | SBR40U300CT |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Common Cathode |
| Peak Non-Repetitive Forward Surge Current Ifsm | 235A |
| Maximum Forward Voltage Vf | 890mV |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 40A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 300V |
Key Features
- This diode has a maximum forward current of 40 amperes.
- It features a silicon junction subtype for reliable switching performance.
- Maximum forward voltage is 890 millivolts which ensures efficient conduction.
- Operates reliably in a temperature range from -65°C to 175°C.
- Mounted through-hole with a TO-220 package type suitable for industrial applications.
- Has peak non-repetitive forward surge current capability of 235 amperes.
- Fast peak reverse recovery time of 50 nanoseconds for high speed switching.
- Maximum peak reverse repetitive voltage rating of 300 volts.
Product Description
DiodesZetex SBR40U300CT is a high-performance switching diode designed for industrial and electronic applications requiring fast switching and durable components. This diode features a common cathode configuration with a silicon junction providing stable switching behavior at currents up to 40 amperes. Packaged in a robust TO-220 through-hole style case with 3 pins, this diode is optimized for secure mounting and efficient heat dissipation.
The maximum forward voltage of 890 millivolts reduces power losses during conduction, while the diode operates within a wide temperature range from -65°C to 175°C, making it suitable for harsh environments including industrial, manufacturing, and power electronics sectors.
Its fast peak reverse recovery time of 50 nanoseconds enhances switching efficiency, reducing energy losses in circuits operating at high frequencies. The diode also withstands peak non-repetitive forward surge currents up to 235 amperes and maximum peak inverse repetitive voltages of 300 volts, supporting robust transient conditions in power management systems.
Compact dimensions of 10.66 mm length, 4.82 mm width, and 16.51 mm height ensure integration in space-constrained electronic assemblies. Although automotive standard compliance is not specified, this diode excels in general electronic and industrial electronics use cases.
This diode supports reliable, high-current power switching. Features silicon junction technology for long-lasting performance. Fast recovery times improve circuit responsiveness and energy efficiency. Wide operating temperature range suitable for diverse environments.
TO-220 package facilitates easy mounting and cooling. Peak surge current capability enhances durability under transient conditions. Compact form factor suitable for dense circuit layouts. Designed for electronic components, power connectors, and semiconductor applications.
DiodesZetex switching diodes like the SBR40U300CT are well-suited for power rectification, industrial electronics, and energy management system applications. Explore EnvMart's wide range of semiconductor Switching Diodes for matching specifications and complementary components.
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Frequently Asked Questions
The maximum forward current of this diode is 40 amperes.
This model has a fast peak reverse recovery time of 50 nanoseconds, enhancing switching efficiency.
The maximum peak reverse repetitive voltage rating is 300 volts.
It operates reliably in a temperature range from -65°C to 175°C.
This diode is packaged in a TO-220 through-hole style case with 3 pins, suitable for secure mounting.
The maximum forward voltage drop is 890 millivolts, which helps in reducing power losses during conduction.
It can withstand a peak non-repetitive forward surge current of up to 235 amperes.
The diode has dimensions of 16.51 mm in height, 10.66 mm in length, and 4.82 mm in width.
This model features a common cathode configuration.
It is designed for industrial electronics, power rectification, and energy management systems.
The country of origin for this diode is India.
It utilizes silicon junction technology for stable switching performance.
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