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Taiwan Semiconductor Silicon Junction Switching Diode 1 A 600 V 2-Pin Sub SMA ES1JL

Category Semiconductor Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 1.43mm
Length 2.9mm
Model ES1JL
Width 1.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type Sub SMA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.7V
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • The diode features a maximum forward voltage of 1.7 V.
  • Operates reliably between -55°C and 150°C temperature range.
  • Peak forward surge current rating is 30 A for non-repetitive pulses.
  • Offers fast switching with peak reverse recovery time of 35 ns.
  • Designed for surface mount applications with 2-pin configuration.

Product Description

Taiwan Semiconductor ES1JL is a high-quality silicon junction switching diode designed for industrial and electronics component applications. It supports a maximum forward current of 1 A and can withstand a maximum peak reverse repetitive voltage of 600 V, suitable for switching and rectifier purposes.

This 2-pin diode comes in a compact Sub SMA surface mount package that facilitates efficient PCB mounting in electronic circuits. It is capable of operating in wide temperature ranges from -55°C to 150°C, making it suitable for demanding environments.

The diode features a low forward voltage drop of 1.7 V, which helps reduce power losses during operation. It can safely handle a peak non-repetitive forward surge current of up to 30 A. With a peak reverse recovery time of 35 ns, it ensures rapid switching capability, beneficial for power management and signal control applications.

Physical dimensions of the diode are 2.9 mm in length, 1.9 mm in width, and 1.43 mm in height, which accommodates compact electronic designs and optimizes PCB space usage.

Taiwan Semiconductor ES1JL is widely deployed in industrial electronics, power supplies, automotive electronics, and various switching applications requiring reliable diode performance under high voltage and current conditions.

The diode features a maximum forward voltage of 1.7 V. Operates reliably between -55°C and 150°C temperature range. Peak forward surge current rating is 30 A for non-repetitive pulses. Offers fast switching with peak reverse recovery time of 35 ns.

Compact dimensions: 2.9 mm length, 1.9 mm width, and 1.43 mm height. Designed for surface mount applications with 2-pin configuration. Explore more semiconductor products and switching diodes to find components suitable for your industrial, laboratory, and manufacturing needs at EnvMart.

Explore more products in our Semiconductor Diode category.

Taiwan Semiconductor Silicon Junction Switching Diode 1 A 600 V 2-Pin Sub SMA ES1JL
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Frequently Asked Questions

The maximum forward voltage of the Taiwan Semiconductor ES1JL diode is 1.7 V.

This model features a peak reverse recovery time of 35 ns, allowing for fast switching capabilities.

The diode operates reliably within a temperature range of -55°C to 150°C.

The peak non-repetitive forward surge current rating for this diode is 30 A.

The dimensions of the Taiwan Semiconductor ES1JL diode are 2.9 mm in length, 1.9 mm in width, and 1.43 mm in height.

This diode is designed for surface mount applications with a 2-pin configuration.

The maximum peak reverse repetitive voltage for this model is 600 V.

The maximum forward current rating of this diode is 1 A.

This diode is commonly used in industrial electronics, power supplies, automotive electronics, and various switching applications.

The sub type of this diode is a silicon junction diode.

With a low forward voltage drop of 1.7 V, it helps reduce power losses during operation.

The country of origin for this diode is India.

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