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Taiwan Semiconductor General Purpose PNP Bipolar Transistor BC807-25 RF, -500 mA, -45 V, 3-Pin SOT-23

Category Bipolar Transistor Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 1.12mm
Length 3.04mm
Model BC807-25 RF
Width 2.64mm
Mount Type Surface
Series BC807
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC80725MTF PNP Transistor, 800 mA, 50 V, 3-Pin SOT-23Brand ON Semiconductor

Key Features

  • Designed for general purpose PNP switching and amplification applications.
  • Maximum collector current of -500 mA for reliable performance.
  • Collector-emitter voltage rating at -45 volts ensures device robustness.
  • Compact 3-pin SOT-23 surface mount package for efficient PCB integration.
  • Minimum DC current gain (hFE) of 160 enhances signal amplification.
  • Maximum power dissipation of 300 mW supports moderate power applications.
  • Operational temperature range from -55°C to 150°C ensures wide usability.
  • Typical transition frequency (ft) of 100 MHz enables RF and amplifier circuits.

Product Description

Taiwan Semiconductor BC807-25 RF is a general purpose PNP bipolar transistor designed for a variety of electronic applications requiring reliable switching and amplification. This device offers a maximum DC collector current of -500 mA and can withstand a collector-emitter voltage up to -45 V, making it suitable for moderate power circuits.

Encased in a compact 3-pin SOT-23 surface mount package, it allows for space-efficient PCB design and automated assembly suitable for high-volume manufacturing. The transistor features a minimum DC current gain of 160, enabling effective signal amplification in low-noise electronic circuits.

The device’s maximum power dissipation of 300 mW and operational temperature range from -55°C to 150°C provide stability and durability across various industrial, consumer electronics, and communication system environments. With a transition frequency of 100 MHz, the BC807-25 RF is ideal for use in RF circuits and small signal amplifiers.

Typical applications include general electronic equipment, power supply circuits, and switching devices. Its surface mount design supports modern electronic assembly processes in electronics manufacturing.

Designed for general purpose PNP switching and amplification applications. Maximum collector current of -500 mA for reliable performance. Collector-emitter voltage rating at -45 volts ensures device robustness. Compact 3-pin SOT-23 surface mount package for efficient PCB integration.

Minimum DC current gain (hFE) of 160 enhances signal amplification. Maximum power dissipation of 300 mW supports moderate power applications. Operational temperature range from -55°C to 150°C ensures wide usability. Typical transition frequency (ft) of 100 MHz enables RF and amplifier circuits.

Pin count of 3 compatible with standard surface mount layouts.

Explore the Electronics & Electricals Semiconductors category at EnvMart for a comprehensive range of high-quality Bipolar Transistors and related components suitable for industrial, laboratory, commercial electronics manufacturing, and hobbyist use.

Taiwan Semiconductor General Purpose PNP Bipolar Transistor BC807-25 RF, -500 mA, -45 V, 3-Pin SOT-23
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Frequently Asked Questions

The maximum collector current for this transistor is -500 mA.

The collector-emitter voltage rating is -45 volts, ensuring robustness in various applications.

This model operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 160, which enhances its signal amplification capabilities.

The maximum power dissipation for this transistor is 300 mW, suitable for moderate power applications.

It is encased in a compact 3-pin SOT-23 surface mount package, facilitating efficient PCB integration.

The typical transition frequency (ft) is 100 MHz, making it suitable for RF and amplifier circuits.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.

It is a PNP bipolar transistor designed for general purpose switching and amplification applications.

The maximum emitter-base voltage (VEBO) is -5V.

This transistor has a pin count of 3, compatible with standard surface mount layouts.

It is suitable for general electronic equipment, power supply circuits, and switching devices.

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