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Renesas Electronics Dual Bipolar Ultra High Frequency Transistor Array 65 mA NPN + PNP 8 V 16-Pin SOIC HFA3096BZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Renesas Electronics |
| Height | 1.75mm |
| Length | 9.9mm |
| Model | HFA3096BZ |
| Width | 6mm |
| Mount Type | Surface |
| Series | HFA3096 |
| Maximum Operating Temperature | 125°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 16 |
| Maximum Collector Emitter Voltage Vceo | 8V |
| Transistor Polarity | NPN + PNP |
| Maximum Power Dissipation Pd | 150mW |
| Maximum DC Collector Current Idc | 65mA |
| Transistor Configuration | Dual |
Key Features
- The transistor array offers a maximum collector current of 65 mA.
- Maximum collector-emitter voltage rating is 8 volts.
- Package type is a 16-pin SOIC designed for surface mounting.
- Maximum power dissipation is rated at 150 mW.
- Operating temperature ranges from -55°C to 125°C, suitable for demanding environments.
- Includes five closely matched transistors on a monolithic chip for consistent electrical and thermal performance.
- NPN transistor features a transition frequency (fT) of 8 GHz and current gain (hFE) of 130.
- PNP transistor has a transition frequency (fT) of 5.5 GHz and current gain (hFE) of 60.
Product Description
Renesas Electronics HFA3096BZ is a dual bipolar transistor array engineered for ultra high frequency applications, featuring NPN and PNP transistor configurations. This transistor array is fabricated using Renesas' complementary bipolar UHF-1 process ensuring excellent performance and reliability. Electrical and thermal matching of the five monolithically integrated transistors provides enhanced circuit precision and consistency.
The device supports a maximum DC collector current of 65 mA and a collector-emitter voltage of 8 V. It has a maximum power dissipation of 150 mW and a wide operating temperature range from -55°C to 125°C, making it suitable for both industrial and automotive-grade environments. The transistor array comes in a 16-pin SOIC package for surface mounting, facilitating compact system design.
NPN transistors within this array have a transition frequency (fT) of 8 GHz and a current gain (hFE) of 130, with an early voltage (VA) of 50 V. The PNP transistors offer a transition frequency of 5.5 GHz and a current gain of 60, with an early voltage of 20 V. The low noise figure of 3.5 dB at 1 GHz makes this component ideal for RF amplifier applications.
The compact size (9.9 mm length, 6 mm width, and 1.75 mm height) ensures easy integration into complex circuit boards without compromising space. This dual transistor array is suited for use in telecommunications, RF amplifiers, high-frequency switching circuits, and other electronic systems operating up to microwave frequencies.
The product utilizes monolithic construction for thermal and electrical matching of the transistors. Suitable for industrial, telecommunications, and high frequency applications. High transition frequency NPN and PNP transistors included in one package.
Operates reliably across a broad temperature range. Compact 16-pin SOIC package eases PCB layout considerations. Explore more bipolar transistor components and industrial semiconductor devices in the Electronics & Electricals category at EnvMart.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector current for this dual bipolar transistor array is 65 mA.
The maximum collector-emitter voltage rating is 8 volts.
It has a maximum power dissipation rating of 150 mW.
The operating temperature range is from -55°C to 125°C.
The dimensions are 9.9 mm in length, 6 mm in width, and 1.75 mm in height.
This array includes five closely matched transistors on a monolithic chip.
The NPN transistor features a transition frequency of 8 GHz, while the PNP transistor has a transition frequency of 5.5 GHz.
The NPN transistor has a current gain (hFE) of 130, and the PNP transistor has a current gain of 60.
It comes in a 16-pin SOIC package designed for surface mounting.
It is suitable for telecommunications, RF amplifiers, high-frequency switching circuits, and other electronic systems operating up to microwave frequencies.
The pin count for this transistor array is 16 pins.
The country of origin for this product is India.
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