onsemi Small Signal NPN Transistor 600 mA 40 V 3-Pin TO-92 2N4401BU

onsemi 2N4401BU Small Signal NPN Transistor is designed for use in general-purpose low power amplification and switching applications. This transistor features a 600 mA maximum collector current and 40 V collector-emitter voltage, ensuring robust performance in various electronic circuits.

Packaged in a compact 3-pin TO-92 form factor suitable for through-hole mounting, it offers easy integration into board layouts. The device supports a maximum power dissipation of 625 mW, allowing for stable operation within thermal limits commonly encountered in consumer and industrial electronics.

Capable of switching frequencies up to 250 MHz, this transistor is ideal for high-speed applications including signal amplification. It operates reliably across a temperature range extending from -55°C to 150°C, providing versatility for demanding environments.

The NPN transistor configuration with a minimum DC current gain of 20 ensures efficient current amplification, making it suitable for a variety of analog and digital circuitry.

The compact physical dimensions of 21.77 mm height, 5.2 mm length, and 4.19 mm width facilitate space-saving electronic designs. Although this device is not rated for automotive standards, it serves well in consumer electronics, laboratory projects, educational purposes, and industrial control systems.

The transistor has a maximum DC collector current of 600 mA. The maximum collector-emitter voltage is 40 V, suitable for general low power amplification. Constructed in a TO-92 package type with 3 pins for easy through-hole PCB mounting.

Features a maximum power dissipation of 625 mW for reliable operation within thermal limits. The transistor polarity is NPN, providing single transistor configuration for versatile circuit use. Maximum transition frequency reaches up to 250 MHz for high-speed switching applications.

The device operates safely between -55°C to 150°C ambient temperature range. It is designed with a minimum DC current gain (hFE) of 20 ensuring amplification efficacy. The height, length, and width of the package are 21.77 mm, 5.2 mm, and 4.19 mm respectively.

The device does not conform to automotive standards but suits general electronic components utilization. Explore our extensive range of Bipolar Transistors and other semiconductor components at EnvMart for reliable industrial and laboratory solutions.