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onsemi Small Signal PNP Transistor, -25 V Collector Emitter Voltage, -1.5 A Collector Current, TO-92 Package SS8550DTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model SS8550DTA
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo -25V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc -1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • This transistor supports a maximum DC collector current of -1.5 A.
  • It has a maximum collector emitter voltage rating of -25 V ensuring reliable operation.
  • Packaged in a compact 3-Pin TO-92 Through Hole configuration for easy PCB mounting.
  • Features a minimum DC current gain (hFE) of 40 for efficient amplification.
  • Maximum power dissipation is 1 W, suitable for small signal circuits.
  • The transistor operates up to 150°C maximum temperature, suitable for varied environments.
  • Maximum transition frequency of 200 MHz supports high-frequency applications.
  • Pin count of 3 with single transistor configuration ensures straightforward circuit integration.

Product Description

onsemi SS8550DTA is a small signal PNP bipolar junction transistor packaged in a TO-92 3-pin Through Hole format. It is engineered for reliable performance with a maximum collector emitter voltage of -25 V and collector current up to -1.5 A. This transistor is suited for amplification and switching applications in industrial, electronics, and communication circuits.

The device has a minimum DC current gain (hFE) of 40 and a maximum power dissipation rating of 1 W, providing efficient signal amplification while maintaining thermal stability. The maximum transition frequency of 200 MHz enables its use in moderate to high-frequency electronic applications.

Measuring 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width, the transistor’s compact TO-92 package supports through-hole mounting technology, ideal for prototyping and production assemblies.

The product operates reliably up to 150°C, making it suitable for demanding environments in industrial equipment, communication devices, and general electronic circuits. It does not conform to specific automotive standards and approvals but offers robust performance for a wide range of electronic component needs.

This transistor supports a maximum DC collector current of -1.5 A. It has a maximum collector emitter voltage rating of -25 V ensuring reliable operation. Packaged in a compact 3-Pin TO-92 Through Hole configuration for easy PCB mounting.

Features a minimum DC current gain (hFE) of 40 for efficient amplification. Maximum power dissipation is 1 W, suitable for small signal circuits. The transistor operates up to 150°C maximum temperature, suitable for varied environments.

Maximum transition frequency of 200 MHz supports high-frequency applications. Pin count of 3 with single transistor configuration ensures straightforward circuit integration.

This bipolar transistor is ideal for electronic component applications across industrial control systems, computing equipment, and general purpose electronic devices. Explore EnvMart’s extensive semiconductor and transistor catalog for compatible and complementary products for your design requirements.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Transistor, -25 V Collector Emitter Voltage, -1.5 A Collector Current, TO-92 Package SS8550DTA
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Frequently Asked Questions

The maximum DC collector current for this transistor is -1.5 A.

This model has a maximum collector-emitter voltage rating of -25 V.

The maximum power dissipation for the SS8550DTA is 1 W.

It is packaged in a TO-92 format, which is a 3-pin through-hole configuration.

The transistor measures 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The minimum DC current gain (hFE) for the SS8550DTA is 40.

This transistor can operate reliably at temperatures up to 150°C.

The maximum transition frequency for the SS8550DTA is 200 MHz, making it suitable for high-frequency applications.

The SS8550DTA is a PNP bipolar junction transistor.

This model has a pin count of 3, configured as a single transistor.

The maximum emitter-base voltage (VEBO) is -6 V, and the maximum collector-base voltage (VCBO) is -40 V.

Yes, it is suitable for various applications including industrial control systems and general electronic devices due to its reliable performance.

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