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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.95mm |
| Length | 5.2mm |
| Model | SS8550DTA |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -25V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -40V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | -1.5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 200MHz |
onsemi SS8550DTA is a small signal PNP bipolar junction transistor packaged in a TO-92 3-pin Through Hole format. It is engineered for reliable performance with a maximum collector emitter voltage of -25 V and collector current up to -1.5 A. This transistor is suited for amplification and switching applications in industrial, electronics, and communication circuits.
The device has a minimum DC current gain (hFE) of 40 and a maximum power dissipation rating of 1 W, providing efficient signal amplification while maintaining thermal stability. The maximum transition frequency of 200 MHz enables its use in moderate to high-frequency electronic applications.
Measuring 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width, the transistor’s compact TO-92 package supports through-hole mounting technology, ideal for prototyping and production assemblies.
The product operates reliably up to 150°C, making it suitable for demanding environments in industrial equipment, communication devices, and general electronic circuits. It does not conform to specific automotive standards and approvals but offers robust performance for a wide range of electronic component needs.
This transistor supports a maximum DC collector current of -1.5 A. It has a maximum collector emitter voltage rating of -25 V ensuring reliable operation. Packaged in a compact 3-Pin TO-92 Through Hole configuration for easy PCB mounting.
Features a minimum DC current gain (hFE) of 40 for efficient amplification. Maximum power dissipation is 1 W, suitable for small signal circuits. The transistor operates up to 150°C maximum temperature, suitable for varied environments.
Maximum transition frequency of 200 MHz supports high-frequency applications. Pin count of 3 with single transistor configuration ensures straightforward circuit integration.
This bipolar transistor is ideal for electronic component applications across industrial control systems, computing equipment, and general purpose electronic devices. Explore EnvMart’s extensive semiconductor and transistor catalog for compatible and complementary products for your design requirements.
Explore more products in our Bipolar Transistors category.
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