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onsemi PNP Transistor, Maximum DC Collector Current -1.5 A, Collector Emitter Voltage -25 V, 3-Pin TO-92 Package SS8550DBU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model SS8550DBU
Width 3.05mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo -25V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc -1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • This transistor supports a maximum power dissipation of 1 W.
  • It has a minimum DC current gain (hFE) of 40 for reliable amplification.
  • Maximum transition frequency is rated at 200 MHz for high-speed applications.
  • Designed for maximum operating temperature up to 150°C for durability.
  • Package dimensions include a height of 20.95 mm, length of 5.2 mm, and width of 3.05 mm.
  • Suitable for a variety of electronic and industrial circuit applications.
  • Single transistor configuration with PNP polarity.
  • Pin count of 3 ensures standard connectivity.

Product Description

onsemi SS8550DBU is a bipolar PNP transistor housed in a 3-pin TO-92 package ideal for through-hole mounting in electronic circuits. It features a maximum DC collector current rating of -1.5 A and a maximum collector emitter voltage of -25 V, offering robust performance for signal amplifying tasks in various electronic assemblies.

With a power dissipation capability of 1 W, this transistor can handle moderate energy loads efficiently. The minimum DC current gain (hFE) of 40 ensures adequate amplification properties for diverse circuit requirements.

The transistor supports a maximum transition frequency of 200 MHz, making it suitable for high-frequency applications commonly found in telecommunication and signal processing equipment.

Operating temperature tolerance is up to 150 degrees Celsius, providing reliability under demanding thermal conditions. The physical dimensions of the package include a height of 20.95 mm, length of 5.2 mm, and width of 3.05 mm, facilitating integration into compact circuit boards.

This transistor is single polarity PNP and designed for through-hole mount applications. It operates with a pin count of three, adhering to standard transistor configuration norms. Due to its design, it is applicable in industrial, laboratory, and electronic manufacturing fields.

The TO-92 package ensures easy placement and soldering on printed circuit boards. This product supports reliable performance in various semiconductor and discrete component assemblies.

Overall, the onsemi SS8550DBU transistor is a dependable component for engineers and manufacturers requiring compact, efficient, and robust PNP transistors for their electronic designs.

Explore more bipolar transistor options and electronic components on EnvMart for your professional industrial and laboratory needs.

Explore more products in our Bipolar Transistors category.

onsemi PNP Transistor, Maximum DC Collector Current -1.5 A, Collector Emitter Voltage -25 V, 3-Pin TO-92 Package SS8550DBU
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Frequently Asked Questions

The maximum DC collector current for this model is -1.5 A.

It has a maximum collector emitter voltage rating of -25 V.

This transistor supports a maximum power dissipation of 1 W.

The minimum DC current gain (hFE) is 40, which ensures reliable amplification.

The maximum transition frequency is rated at 200 MHz, suitable for high-speed applications.

The package dimensions are a height of 20.95 mm, length of 5.2 mm, and width of 3.05 mm.

It is designed for a maximum operating temperature of up to 150°C.

This model is designed for through-hole mounting.

This transistor has a pin count of 3, ensuring standard connectivity.

It is a single transistor configuration with PNP polarity.

It is suitable for various electronic and industrial circuit applications, particularly in signal amplification.

The maximum emitter-base voltage (VEBO) is -6 V and the maximum collector-base voltage (VCBO) is -40 V.

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