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Infineon Single IGBT Module 70 A 650 V AG-EASY3B FS3L100R07W3S5B11BPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 109.9mm |
| Model | FS3L100R07W3S5B11BPSA1 |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-EASY3B |
| Minimum Operating Temperature | -40°C |
| Maximum Continuous Collector Current Ic | 70A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.38V |
| Maximum Power Dissipation Pd | 20mW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 1 |
Key Features
- Maximum continuous collector current of 70 amperes.
- Maximum collector emitter voltage rating of 650 volts.
- Single transistor configuration ensuring precise control.
- Maximum power dissipation rated at 20 milliwatts.
- Operating temperature range from -40°C to 150°C for robust performance.
- Features a maximum gate emitter voltage of 20 volts.
- Collector emitter saturation voltage of 1.38 volts ensures efficient switching.
- Compact module with length of 109.9 mm and height of 16.4 mm for space-saving installations.
Product Description
The Infineon FS3L100R07W3S5B11BPSA1 Single IGBT Module is designed for industrial and renewable energy applications, offering a maximum continuous collector current of 70 A and a collector emitter voltage rating of 650 V. Packaged in the AG-EASY3B form, this module features advanced TRENCHSTOP™ 5 technology and PressFIT contact technology to provide reliable and efficient switching performance.
Engineered for use in 1000 V DC photovoltaic systems with three-level NPC1 topology, it supports output power exceeding 40 kVA with efficiency reaching up to 99%. The module maintains robust operation across a wide temperature range from -40°C to 150°C, making it suitable for demanding environments.
Key technical features include a maximum collector emitter saturation voltage of 1.38 V, a maximum gate emitter voltage of 20 V, and compact dimensions (length 109.9 mm and height 16.4 mm), facilitating integration into machinery and systems where space is at a premium.
This IGBT Module is ideal for solar power inverters, industrial motor drives, and power electronics systems requiring high reliability and performance. Easy integration and compatibility with existing AG-EASY3B based systems enhance production efficiency and reliability.
Maximum continuous collector current of 70 amperes. Maximum collector emitter voltage of 650 volts. Single transistor configuration for precise control. Maximum power dissipation rated at 20 milliwatts ensures energy efficiency.
Wide operating temperature range from -40°C to 150°C. Maximum gate emitter voltage of 20 volts for safe operation. Low collector emitter saturation voltage of 1.38 volts. Compact dimensions: 109.9 mm length and 16.4 mm height.
Advanced Infineon TRENCHSTOP™ 5 technology for enhanced performance. Designed for solar system applications providing up to 40 kVA output power.
Explore the Infineon category at EnvMart for comprehensive options of semiconductor and power modules tailored for industrial automation, renewable energy, and electronic system design.
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Frequently Asked Questions
The maximum continuous collector current for this module is 70 amperes.
The collector emitter voltage rating is 650 volts.
It operates within a temperature range of -40°C to 150°C.
The maximum gate emitter voltage is 20 volts.
The module has a length of 109.9 mm and a height of 16.4 mm.
The collector emitter saturation voltage is 1.38 volts.
The maximum power dissipation is rated at 20 milliwatts.
This module contains a single transistor configuration.
It uses the AG-EASY3B package type.
This module is designed for industrial and renewable energy applications, including solar power inverters and industrial motor drives.
It features advanced TRENCHSTOP™ 5 technology for enhanced performance.
The country of origin for this module is India.
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