STMicroelectronics STripFET II N-Channel MOSFET 75 A 75 V Enhancement 3-Pin TO-263 STB75NF75LT4

STMicroelectronics STB75NF75LT4 is a high-performance N-Channel MOSFET from the STripFET II series, designed for power switching applications requiring up to 75 A drain current and 75 V drain source voltage. Housed in a compact 3-pin TO-263 surface mount package, it features enhancement mode channel operation and offers ultra-low gate charge coupled with low on-resistance, enabling efficient power management and reduced switching losses.

With a maximum power dissipation rating of 300 W, this MOSFET supports demanding industrial and electronic designs requiring reliable high power switching. The device’s operating temperature range from -55°C to 175°C ensures stable performance under harsh environmental conditions common in automotive, industrial, and commercial applications.

The physical dimensions are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height, suitable for compact PCB layouts with surface mounting technology. Its maximum drain source resistance (Rds(on)) of 11 milliohms reduces conduction losses, enhancing energy efficiency in power circuits.

The maximum gate source voltage tolerance between -15 V and +15 V protects the gate from voltage spikes during switching events, while the typical gate charge of 75 nC facilitates fast and efficient switching, reducing thermal stresses and improving overall circuit reliability.

This MOSFET is ideal for industrial power supplies, motor control, power inverters, and electronic switching modules. It finds applications in semiconductor discrete product assemblies for automotive, HVAC, manufacturing, and general industrial electronics.

The device features ultra-low gate charge and low on-resistance for efficient switching. It uses the STripFET II series known for improved performance and reliability. Enhancement mode channel operation enhances device control and flexibility.

Maximum power dissipation is rated at 300 W for robust handling of power loads. Operating temperature ranges from -55°C to 175°C for wide environmental adaptability. Surface mount type with a compact 10.4 mm length and 9.35 mm width footprint.

Maximum drain source resistance of 11 milliohms minimizes conduction losses. Maximum gate source voltage tolerances are -15 V to +15 V protecting against voltage spikes. Typical gate charge of 75 nC at Vgs enhances switching speed and efficiency.

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