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ROHM N-Channel MOSFET, 380 mA, 60 V Enhancement Mode, 3-Pin Surface Mount UMT Package BSS138BWAHZGT106
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1mm |
| Length | 2.1mm |
| Model | BSS138BWAHZGT106 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | UMT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 380mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 680mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET comes in a compact UMT package suitable for surface mounting.
- It features an enhancement mode channel and low drain-source resistance.
- Supports maximum power dissipation of 300 mW for reliable performance.
- Operates safely over a temperature range of -55°C to 150°C.
- Rated with a maximum gate-source voltage of 20 V and forward voltage of 1.2 V.
- Qualifies for automotive use with AEC-Q101 standard compliance.
- Ideal for switching circuits, high-side load switches, and relay driver applications.
Product Description
ROHM BSS138BWAHZGT106 is a high-reliability N-Channel MOSFET housed in a compact 3-pin UMT surface mount package. It features an enhancement mode channel with a maximum continuous drain current of 380 mA and a maximum drain-source voltage of 60 V. This device is designed to provide efficient switching performance and contains an integrated ESD protection diode, making it suitable for robust automotive and industrial applications.
The MOSFET supports a maximum power dissipation of 300 mW and can operate reliably across a broad temperature range from -55°C to 150°C. The device's low maximum drain-source resistance of 680 mΩ ensures minimal power loss and heat generation during operation. Furthermore, it can safely handle a maximum gate-source voltage of 20 V and a forward voltage of 1.2 V.
The compact dimensions of 2.1 mm length, 1.35 mm width, and 1.0 mm height facilitate integration in designs requiring small footprints. This product meets the automotive industry standard AEC-Q101, ensuring it is suited for high-reliability automotive electronic systems.
Applications include switching circuits, high-side load switches, relay drivers, and other power management scenarios where durable and efficient MOSFETs are required. The device is lead-free, halogen-free, and uses ultra-low voltage drive technology, enhancing environmental compliance and operational efficiency.
The MOSFET comes in a compact UMT package suitable for surface mounting. Features an enhancement mode channel and low drain-source resistance. Supports maximum power dissipation of 300 mW for reliable performance. Operates safely over a temperature range of -55°C to 150°C.
Rated maximum gate-source voltage is 20 V and forward voltage is 1.2 V. Certified automotive grade compliant with AEC-Q101. Compact dimensions provide easy PCB integration. Ideal for switching and relay driver applications in automotive and industrial uses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 380 mA.
It can handle a maximum drain-source voltage of 60 V.
This MOSFET supports a maximum power dissipation of 300 mW.
It operates reliably over a temperature range from -55°C to 150°C.
The maximum gate-source voltage is rated at 20 V.
The dimensions are 2.1 mm in length, 1.35 mm in width, and 1.0 mm in height.
Yes, it qualifies for automotive use with AEC-Q101 standard compliance.
It comes in a compact UMT package suitable for surface mounting.
The forward voltage is rated at 1.2 V.
The maximum drain-source resistance is 680 mΩ.
It is suitable for switching circuits, high-side load switches, and relay driver applications.
This model features an enhancement mode N-channel.
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