Nexperia N-Channel Enhancement MOSFET 1 A 100 V Surface Mount SOT-23 PMV280ENEAR

Nexperia PMV280ENEAR is a high-quality N-Channel enhancement mode MOSFET designed for industrial and commercial semiconductor applications. Packaged in a compact and surface-mountable SOT-23 plastic package, this device offers a maximum continuous drain current (Id) of 1 ampere and a maximum drain-source voltage (Vds) of 100 volts, making it well-suited for low to medium power switching and amplification tasks.

Utilizing advanced trench MOSFET technology, PMV280ENEAR delivers excellent switching speed and low on-resistance (892 milliohms), which optimizes power efficiency in circuits. It is logic level compatible, facilitating easy integration into various digital and analog control systems.

The device’s robust thermal rating supports power dissipation up to 5 watts, with an operating temperature range spanning from -55°C to 150°C, enabling reliable performance in automotive and harsh industrial environments. It complies with the automotive industry standard AEC-Q101, ensuring suitability for high-reliability applications.

Typical gate charge of 4.5 nanocoulombs at Vgs contributes to fast switching capabilities essential for relay drivers, high-speed line drivers, low-side load switches, and other switching circuits. Its maximum gate-source voltage rating of 20 volts provides enhanced protection against gate overvoltage conditions.

The small form factor package, measuring 3 mm length, 1.4 mm width, and 1 mm height, supports high-density PCB designs in automotive, industrial power management, and consumer electronics.

This MOSFET is ideal for applications requiring efficient and reliable switching components including industrial control systems, power conversion, and load driving functions.

Set within Nexperia's portfolio of power MOSFETs ranging from 75 V to 200 V ratings, the PMV280ENEAR balances high switching performance with excellent safe operating area characteristics. It provides engineers with a trusted solution for space- and power-critical design demands.

Features enhancement mode operation for efficient switching. Low maximum drain-source resistance of 892 milliohms reduces power losses. Maximum power dissipation rating is 5 W for reliable thermal performance. Compact dimensions: 3 mm length, 1.4 mm width, and 1 mm height in a SOT-23 package.

Qualified to automotive standard AEC-Q101 for high reliability. Supports a wide operating temperature range from -55°C to 150°C. Typical gate charge at 4.5 nC enables fast switching applications. Maximum gate-source voltage of 20 V ensures robust gate protection.

Ideal for relay driver, high-speed line driver, low-side load switching, and switching circuits. Logic level compatible and built with trench MOSFET technology for optimal performance.

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