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Nexperia N-Channel MOSFET 5.5 A 30 V Enhancement 3-Pin SOT-23 PMV25ENEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PMV25ENEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 39mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.94W |
| Typical Gate Charge Qg @ Vgs | 12.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The MOSFET is housed in a compact SOT-23 surface-mount package with 3 pins.
- It supports a maximum power dissipation of 6.94 W, with a maximum operating temperature of 150°C.
- The device has a low drain source resistance of 39 mΩ ensuring efficient conduction.
- Typical gate charge is 12.6 nC at Vgs, delivering fast switching capability.
- It includes ElectroStatic Discharge protection greater than 2 kV HBMA.
- AEC-Q101 compliant for demanding automotive applications.
- Suitable for thermal environments from -55°C minimum to 150°C maximum operating temperature.
- Measures 3 mm length, 1.4 mm width, and 1.1 mm height, facilitating compact PCB layouts.
Product Description
Nexperia PMV25ENEAR is a high-performance N-Channel enhancement mode MOSFET designed for power control in automotive, industrial, and electronic applications. This device features a maximum continuous drain current of 5.5 A and maximum drain-source voltage of 30 V, supporting efficient power switching and control within compact spaces.
Packaged in a 3-pin SOT-23 surface-mount design using advanced trench MOSFET technology, it offers low threshold voltage and very fast switching speeds, essential for responsive power management.
The MOSFET exhibits a low on-resistance of 39 mΩ and sustains a maximum power dissipation of 6.94 W, making it reliable for thermally demanding environments with operation between -55°C to 150°C. It also includes ElectroStatic Discharge protection exceeding 2 kV HBMA, protecting circuits from static damage.
Certified to AEC-Q101 standards, the PMV25ENEAR is qualified for automobile electronics, providing dependable performance in engine management, body, and chassis control systems. Compact SOT-23 package with 3 pins for surface mounting.
Maximum continuous drain current rating of 5.5 A for reliable current handling. 30 V maximum drain-source voltage supports medium-voltage applications. Low gate charge of 12.6 nC enables fast switching and high efficiency.
Wide operating temperature range from -55°C to 150°C ensures durability. AEC-Q101 automotive qualification guarantees quality for automotive systems. ElectroStatic Discharge protection over 2 kV HBMA enhances robustness.
This MOSFET is ideal for automotive power control, industrial power supplies, and electronic device protection where a combination of high speed, efficiency, and reliability is critical.
Explore more Nexperia power semiconductor solutions on EnvMart for advanced industrial and automotive electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.5 A.
It supports a maximum drain-source voltage of 30 V.
This model has a maximum power dissipation of 6.94 W.
The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge is 12.6 nC at Vgs.
This model is packaged in a compact SOT-23 surface-mount package with 3 pins.
Yes, it is AEC-Q101 compliant, making it suitable for automotive applications.
The maximum gate-source voltage is 20 V.
The on-resistance is 39 mΩ, ensuring efficient conduction.
Yes, it includes ElectroStatic Discharge protection greater than 2 kV HBMA.
It is suitable for automotive power control, industrial power supplies, and electronic device protection.
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