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Nexperia N-Channel MOSFET 600 mA 20 V Enhancement 8-Pin DFN PMDXB600UNEZ

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Nexperia N-Channel MOSFET 600 mA 20 V Enhancement 8-Pin DFN PMDXB600UNEZ

Name: Nexperia N-Channel MOSFET 600 mA 20 V Enhancement 8-Pin DFN PMDXB600UNEZ
Brand: Nexperia
SKU: 214960
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	400μm
Length	1.15mm
Model	PMDXB600UNEZ
Width	1.05mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	600mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	4.03W
Typical Gate Charge Qg @ Vgs	0.4nC
Maximum Gate Source Voltage Vgs	8V
Leadless ultra small and ultra thin SMD plastic package	1.1 x 1.0 x 0.37 mm

Key Features

This MOSFET utilizes TrenchMOS technology for reliable switching performance.
The device package is a compact leadless ultra-small DFN1010B-6 suitable for surface mounting.
It has a maximum power dissipation rating of 4.03 W.
Operating temperature ranges from -55°C to 150°C ensuring durability under harsh conditions.
Maximum gate-source voltage is rated at 8 V for safe operation.
The maximum drain-source resistance is 3 Ω.
Its exposed drain pad enhances thermal conduction efficiency.
Protective ESD rating exceeds 1 kV HBM.

Product Description

Nexperia PMDXB600UNEZ is an N-channel enhancement mode MOSFET designed for low voltage and portable application use requiring efficient switching performance. It supports a maximum continuous drain current of 600 mA and withstands drain-source voltages up to 20 V.

Packaged in a leadless DFN1010B-6 (SOT1216) ultra-small surface mount device, the MOSFET benefits from advanced TrenchMOS technology for excellent reliability and performance. The compact package measures approximately 1.1 x 1.0 x 0.37 mm and features an exposed drain pad for superior thermal conduction.

The device operates safely across a wide temperature range from -55°C up to 150°C, making it suitable for diverse industrial, electronic component designs, and power management applications.

Key electrical specifications include a maximum power dissipation of 4.03 W, maximum gate-source voltage of 8 V, and typical gate charge of 0.4 nC at Vgs. It exhibits a maximum drain-source resistance of 3 Ω, ensuring efficient power handling with minimal losses.

Electrostatic discharge protection greater than 1 kV Human Body Model enhances device robustness. The eight-pin DFN package supports surface mount assembly for compact PCB layouts in consumer electronics, automotive electronics, industrial control systems, and portable devices.

TrenchMOS technology for high reliability switching. Leadless ultra-small DFN package with exposed drain pad. 600 mA continuous drain current capability. 20 V maximum drain-source voltage handling. Wide operating temperature from -55°C to 150°C.

Surface mount device with 8 pins for compact design. 4.03 W maximum power dissipation rating. Electrostatic discharge protection >1 kV HBM.

This Nexperia MOSFET is well suited for electronic circuit design requiring precise power control and efficient switching in portable, industrial, and automotive electronics. Browse the Electronics & Electricals category at EnvMart for other high-quality semiconductor components and MOSFET options.