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Nexperia Medium Power 1 A NPN Bipolar Transistor 80 V 3-Pin SOT-223 Package BCP56-10TX

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.65mm
Length 6.5mm
Model BCP56-10TX
Width 3.5mm
Mount Type Surface
Series BCP56
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 63
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.35W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 180MHz

Key Features

  • The transistor features a maximum power dissipation of 1.35 W for reliable performance.
  • It has a minimum DC current gain (hFE) of 63, suitable for amplification applications.
  • Operating temperature ranges from -55°C to 150°C for versatility in various environments.
  • The package is surface-mount type SOT-223 with compact dimensions of 6.5 mm length and 3.5 mm width.
  • It complies with RoHS standards and meets automotive AEC-Q101 qualification.
  • Provides high-frequency operation with a maximum transition frequency of 180 MHz.
  • Lowest emitter base voltage is 5 V, enabling efficient transistor switching.
  • Suitable for switching and amplification applications in electronic circuits.

Product Description

Nexperia BCP56-10TX is a medium power NPN bipolar transistor designed for switching and amplification with a maximum collector current of 1 A and collector emitter voltage rating of 80 V. Packaged in a compact 3-pin SOT-223 surface-mount device, this transistor delivers reliable performance in a small footprint.

This transistor features a maximum power dissipation of 1.35 W and a high transition frequency of up to 180 MHz, making it suitable for fast switching applications in industrial and electronic use cases. The device operates efficiently over a wide temperature range from -55°C to 150°C and meets RoHS environmental standards and the automotive qualification AEC-Q101, ensuring compliance with quality and reliability standards.

The compact dimensions (length 6.5 mm, width 3.5 mm, height 1.65 mm) support space-saving electronics design. Its minimum DC current gain (hFE) of 63 enables effective amplification in circuits. The device's surface-mount SOT-223 package facilitates easy PCB integration and robust mechanical mounting.

This Nexperia BCP56-10TX transistor is ideal for applications requiring medium power handling with efficient switching and amplification capabilities, including automotive, manufacturing, HVAC, and industrial electronic systems.

The transistor features a maximum power dissipation of 1.35 W for reliable performance. It has a minimum DC current gain (hFE) of 63, suitable for amplification applications. Operating temperature ranges from -55°C to 150°C for versatility in various environments.

The package is surface-mount type SOT-223 with compact dimensions of 6.5 mm length and 3.5 mm width. It complies with RoHS standards and meets automotive AEC-Q101 qualification. Provides high-frequency operation with a maximum transition frequency of 180 MHz.

Lowest emitter base voltage is 5 V, enabling efficient transistor switching. Suitable for switching and amplification applications in electronic circuits. Compact and space-saving design ideal for medium power applications.

Explore Nexperia transistor solutions for quality and durability in your industrial and electronic component sourcing at EnvMart.

Explore more products in our Bipolar Transistors category.

Nexperia Medium Power 1 A NPN Bipolar Transistor 80 V 3-Pin SOT-223 Package BCP56-10TX
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Frequently Asked Questions

The maximum power dissipation of this transistor is 1.35 W.

The dimensions of the SOT-223 package are 6.5 mm in length, 3.5 mm in width, and 1.65 mm in height.

This transistor has a maximum collector current rating of 1 A.

The minimum DC current gain (hFE) for the BCP56-10TX is 63.

The operating temperature range for this model is from -55°C to 150°C.

The maximum collector-emitter voltage rating is 80 V.

This transistor complies with the automotive standard AEC-Q101.

The maximum transition frequency for this transistor is 180 MHz.

The BCP56-10TX is an NPN bipolar transistor.

This model uses a surface-mount type for installation.

The maximum emitter-base voltage (VEBO) for the BCP56-10TX is 5 V.

Yes, the BCP56-10TX complies with RoHS environmental standards.

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