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onsemi Silicon Junction Switching Diode, Single Diode, 200 mA Forward Current, 250 V Reverse Voltage, 3 Pin SOT-23 BAS21LT3G

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onsemi Silicon Junction Switching Diode, Single Diode, 200 mA Forward Current, 250 V Reverse Voltage, 3 Pin SOT-23 BAS21LT3G

Name: onsemi Silicon Junction Switching Diode, Single Diode, 200 mA Forward Current, 250 V Reverse Voltage, 3 Pin SOT-23 BAS21LT3G
Brand: onsemi
SKU: 212558
Price: 0.03 USD
Availability: InStock

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Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.94mm
Length	2.9mm
Model	BAS21LT3G
Width	1.3mm
Mount Type	Surface
Series	BAS21
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Power Dissipation Pd	385mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	625mA
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	50ns
Maximum Forward Current If	200mA
Maximum Peak Reverse Repetitive Voltage Vrrm	250V

Key Features

Designed as a single silicon junction switching diode in SOT-23 package.
Supports maximum forward current of 200 mA for efficient switching.
Maximum reverse voltage rating of 250 V ensures reliable operation.
Peak power dissipation is 385 mW suitable for small signal applications.
Compact dimensions with length 2.9 mm, width 1.3 mm, and height 0.94 mm.
Operates within a temperature range from -55°C to 150°C.
Peak reverse recovery time of 50 nanoseconds enabling fast switching performance.
Surface mount type with 3 pins simplifies PCB integration.

Product Description

onsemi BAS21LT3G Silicon Junction Switching Diode is a robust small signal discrete semiconductor designed for switching applications requiring reliable performance in compact surface mount form factor.

This device is configured as a single diode with a maximum forward current of 200 mA and a peak reverse repetitive voltage of 250 V. Providing a power dissipation capability of 385 mW, it is suitable for a wide range of electronic circuit designs where efficient switching and low power consumption are critical.

Its peak reverse recovery time of 50 ns enables fast switching and minimal switching losses, making it ideal for high-frequency circuits. The diode package, SOT-23, features a 3-pin surface mount design with a compact profile: 2.9 mm length, 1.3 mm width, and height of 0.94 mm, facilitating easy PCB layout and assembly.

Operating across a broad temperature range from -55°C up to 150°C, this component is reliable for industrial, commercial, and laboratory electronics use. It does not carry automotive grade certification but complies with typical semiconductor quality standards.

Single silicon junction diode configuration enhances switching characteristics. Rated for 200 mA maximum forward current and 250 V reverse voltage. Surface mount 3-pin SOT-23 package provides compactness and ease of installation.

Peak recovery time of 50 ns supports high-speed switching. Wide operating temperature from -55°C to 150°C supports versatile applications. Maximum power dissipation of 385 mW suitable for small signal circuits. Compact physical dimensions: 2.9 × 1.3 × 0.94 mm (L×W×H).

This diode is widely used in electronic component manufacturing, semiconductor discrete component assemblies, power and connector systems, and various switching diode applications. The BAS21 series from onsemi is recognized for stable performance in general-purpose electronics, industrial equipment, and power conversion modules.

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