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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 4.3 A 800 V Enhancement 3-Pin TO-220 STP5NK80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP5NK80Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 2.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 32.4nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Advanced MDmesh SuperMESH technology ensures high efficiency and low switching losses.
- Designed for through-hole mounting with a compact 3-pin TO-220 package.
- Supports a maximum power dissipation of 110 W suitable for power switching applications.
- Features enhancement mode channel operation for reliable control performance.
- Operates within a temperature range from -55°C to 150°C, ensuring robust thermal stability.
- Low maximum drain-source resistance of 2.4 Ω enhances conduction efficiency.
- Typical gate charge of 32.4 nC at Vgs maximizes switching speed.
- Withstands gate-source voltage of -30 V to +30 V for enhanced protection.
Product Description
STMicroelectronics STP5NK80Z is a high-quality MDmesh SuperMESH N-Channel MOSFET designed for advanced electronic and semiconductor applications requiring efficient power switching and robust thermal performance. This enhancement mode MOSFET supports a maximum continuous drain current of 4.3 Amperes and withstands a maximum drain-source voltage of 800 Volts. Packaged in a compact 3-pin TO-220 through-hole mount, it enables easy integration into various power electronics circuits.
This MOSFET features a low maximum drain-source resistance (Rds) of 2.4 Ohms, reducing conduction losses and improving energy efficiency. Its typical gate charge is 32.4 nanoCoulombs at gate-source voltage, offering rapid switching responses crucial for applications in power management and control systems. The device tolerates gate-source voltages in the range of -30 V to +30 V, providing excellent reliability and circuit protection.
Engineered to operate reliably over a broad ambient temperature span from -55°C up to 150°C, the STP5NK80Z is suitable for demanding industrial and commercial uses. The device’s physical dimensions - 10.4 mm length, 9.15 mm height, and 4.6 mm width - allow for versatile hardware designs. With a maximum power dissipation rating of 110 Watts, it can handle substantial power without thermal degradation.
Common use cases include power supplies, motor control, industrial automation, and electronic switching circuits where durability, efficiency, and thermal stability are paramount. The TO-220 package facilitates effective heat dissipation and mechanical stability.
Advanced MDmesh SuperMESH technology for optimized switching efficiency. Enhancement mode with N-Channel offering reliable switching control. Robust power dissipation up to 110 W suitable for industrial needs. Wide operating temperature range ensures stability in harsh environments.
Compact 3-pin TO-220 through-hole package for easy mounting. Low Rds(on) minimizes conduction losses and enhances efficiency. Gate charge optimized for fast switching performance. High gate-source voltage rating for device protection.
Ideal for power electronics, industrial automation, and semiconductor applications. Explore more STMicroelectronics power semiconductor components and find precise solutions for your electronic design projects at EnvMart.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 4.3 Amperes.
It can withstand a maximum drain-source voltage of 800 Volts.
The maximum power dissipation rating is 110 Watts.
It operates within a temperature range from -55°C to 150°C.
This model is packaged in a compact 3-pin TO-220 through-hole mount.
The maximum drain-source resistance (Rds) is 2.4 Ohms.
The typical gate charge is 32.4 nanoCoulombs at gate-source voltage.
It features an enhancement mode N-Channel operation.
Common applications include power supplies, motor control, and industrial automation.
The dimensions are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.
It can tolerate gate-source voltages in the range of -30 V to +30 V.
The country of origin for this model is India.
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