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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STF16N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.299Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STF16N65M5 MDmesh M5 N-Channel MDmesh V Power MOSFET is a high-performance semiconductor device designed for industrial and electronic applications requiring efficient power switching and management. It is engineered to handle continuous drain currents of up to 12 amperes and a maximum drain-source voltage rating of 650 volts, making it ideal for power conversion systems and hard switching environments.
The enhancement mode N-channel MOSFET features a low on-state resistance of 0.299 ohms, which minimizes conduction losses and improves energy efficiency. Equipped with a typical gate charge of 45 nanocoulombs at 4.5 volts, this device ensures reduced switching losses and faster switching speeds, optimizing overall circuit performance.
The MOSFET is housed in a 3-pin TO-220FP package suitable for through-hole mounting, providing ease of installation into power supply boards and electronic modules. Its compact physical dimensions (length: 10.4 mm, width: 4.6 mm, height: 9.3 mm) allow for space-efficient board layouts.
Operational temperature ranges from -55°C to a maximum of 150°C, ensuring reliable performance across diverse industrial, laboratory, and commercial environments, including solar power inverters, PWM topologies, power factor correction circuits, and electronic lighting controls.
This power MOSFET is specifically optimized for high-power PFC and PWM topologies, making it suitable for energy-conscious applications requiring compact, reliable, and efficient hard switching components.
This MOSFET features low on-state resistance of 0.299 ohms for efficient conduction. The device supports a maximum power dissipation of 90 watts to handle high workloads. Enhancement mode N-channel design is optimized for energy-efficient hard switching applications.
Typical gate charge of 45 nC reduces switching losses and improves performance. It operates reliably between -55°C to 150°C for demanding industrial environments. Suitable for solar power converters, power supplies, and electronic lighting controls.
The package offers through-hole mounting ease with three pins and compact dimensions. Maximum gate-source voltage rating is 25 V, ensuring safe gate operation.
It is a dependable option for engineers and technicians designing high-efficiency power electronics circuits requiring dependable switching devices. Explore more in our Power MOSFET category to find complementary components and accessories available on EnvMart.
Explore more products in our Discrete Semiconductors category.
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