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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 1 A 600 V Enhancement 3-Pin TO-252 STD1NK60T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD1NK60T4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 8.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- The device features the MDmesh SuperMESH series enhancement mode technology.
- It supports surface mounting with a 3-pin TO-252 package type.
- Maximum power dissipation is 30 W, suitable for efficient thermal management.
- Operational temperature range spans from -55°C to 150°C, ensuring reliability in varied environments.
- The MOSFET has a maximum gate-source voltage rating of -30 V to +30 V.
- Typical gate charge is 7 nC at Vgs, optimizing switching performance.
- The maximum drain-source resistance (Rds) is 8.5 Ω, supporting effective current flow control.
- Physical dimensions include width of 6.2 mm, height of 2.4 mm, and length of 6.6 mm.
Product Description
STMicroelectronics STD1NK60T4 MDmesh SuperMESH N-Channel MOSFET is designed for power electronic applications requiring efficient switching and high voltage handling capabilities. This device features a maximum continuous drain current of 1 A and a drain-source voltage of 600 V, housed in a compact TO-252 package with three pins, ideal for surface mounting.
This enhancement mode MOSFET offers a maximum power dissipation of 30 W, making it suitable for a variety of industrial and commercial electronic circuits, including power management, motor control, and switching power supplies.
Operational temperature ranges from -55°C to 150°C, allowing reliable performance even in harsh thermal environments. The device supports a maximum gate-source voltage from -30 V to +30 V, enabling flexible gate drive requirements.
Characteristic gate charge of 7 nC aids fast switching, contributing to energy efficiency and lower heat generation during operation. With a maximum drain-source resistance of 8.5 Ω, the MOSFET offers effective conduction with minimized losses.
The MDmesh SuperMESH technology improves device ruggedness and switching speed. Compact TO-252 package facilitates easy integration into PCB assemblies with surface mount technology. Suitable for industrial electronics, power control systems, and general purpose semiconductor applications.
Withstands wide temperature ranges, making it reliable for automotive and industrial sectors. Includes dimensions of 6.2 mm width, 2.4 mm height, and 6.6 mm length for layout planning.
STMicroelectronics MDmesh SuperMESH N-Channel MOSFET STD1NK60T4 is an optimal choice for designers and engineers seeking a robust, high-voltage, low power dissipation transistor solution. Browse more MOSFET and semiconductor components in EnvMart for comprehensive industrial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1 A.
The maximum drain-source voltage rating is 600 V.
The dimensions of the TO-252 package are 6.2 mm in width, 2.4 mm in height, and 6.6 mm in length.
The operational temperature range spans from -55°C to 150°C.
The maximum power dissipation for this model is 30 W.
The typical gate charge is 7 nC at Vgs.
The maximum gate-source voltage rating is -30 V to +30 V.
The maximum drain-source resistance (Rds) is 8.5 Ω.
This MOSFET features an N-channel type.
This model is designed for surface mounting.
The STD1NK60T4 belongs to the MDmesh and SuperMESH series.
The country of origin for this MOSFET is India.
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