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STMicroelectronics STripFET N-Channel MOSFET, 60 V, 35 A, 70 W Power Dissipation, TO-252 Package STD30NF06LT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD30NF06LT4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Rated for 70 W maximum power dissipation ensuring reliable operation.
- Features enhancement mode channel for efficient switching performance.
- Has low maximum drain-source resistance of 28 mΩ for improved efficiency.
- Operates over a wide temperature range from -55°C to 175°C suitable for harsh environments.
- Typical gate charge at Vgs is 23 nC for fast switching speeds.
- Includes standard 3-pin configuration for easy PCB integration.
- Designed for surface mount technology with compact dimensions of 6.6 mm length and 6.2 mm width.
- Maximum gate-source voltage rating of -20 V to +20 V provides good control flexibility.
Product Description
STMicroelectronics STD30NF06LT4 is a high-performance N-Channel STripFET™ MOSFET transistor designed for power switching applications. With a maximum drain current of 35 A and a drain-source voltage of 60 V, this MOSFET is ideal for compact and efficient power management in industrial, electronics manufacturing, and consumer electronic circuits. The device comes in a TO-252 surface mount package, facilitating automated assembly and compact PCB layouts.
This transistor operates in enhancement mode and features a low resistance drain-source path (28 mΩ max), optimizing energy efficiency and reducing heat generation. Its power dissipation capability of 70 W allows for robust handling of high current loads under various conditions. The broad operating temperature range, from -55°C to 175°C, ensures reliability in demanding industrial or automotive environments.
The STD30NF06LT4 includes a typical gate charge of 23 nC at the gate-source voltage, enabling rapid switching, which is essential for high-frequency applications. The maximum gate-source voltage limits of ±20 V provide flexibility in driving circuits without risk of damage.
The compact package dimensions (6.6 mm length, 6.2 mm width, and 2.4 mm height) make it suitable for space-constrained designs while maintaining excellent thermal performance. This MOSFET is commonly used in power management, motor control, DC-DC converters, and other electronic circuits requiring durable and efficient switching elements.
Rated continuous drain current of 35 A maximizes load capacity. Standard TO-252 package supports surface mount technology (SMT) assembly. Enclosed in a rugged package dimensioned for reliable operation. Operating temperature range ensures suitability for industrial use.
Low Rds(on) reduces conduction losses and improves efficiency. High maximum power dissipation supports demanding applications. Enhancement mode operation for simplified control. Protects circuits with gate-source voltage ratings of -20 to +20 V.
Forward voltage of 1.5 V contributes to efficient load conduction.
Suitable for electronics manufacturing, industrial automation, power supply design, and automotive electronics, the STD30NF06LT4 offers robust performance with STMicroelectronics' trusted quality.
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Frequently Asked Questions
The maximum continuous drain current for the STD30NF06LT4 is 35 A.
This model has a maximum drain-source voltage rating of 60 V.
The STD30NF06LT4 can dissipate a maximum power of 70 W.
The package dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum gate-source voltage rating for this model is -20 V to +20 V.
The typical gate charge at Vgs is 23 nC, which facilitates fast switching speeds.
The maximum drain-source resistance (Rds(on)) is 28 mΩ, which helps improve efficiency.
It operates over a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
This model features an enhancement mode N-channel design for efficient switching performance.
It is commonly used in power management, motor control, DC-DC converters, and various electronic circuits.
The TO-252 package has a standard pin count of 3.
The country of origin for this MOSFET is India.
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