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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 400 mA 600 V Enhancement 4-Pin SOT-223 STN1HNK60
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.8mm |
| Length | 6.5mm |
| Model | STN1HNK60 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 8.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.3W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This enhancement mode MOSFET is part of the MDmesh SuperMESH series designed for efficient switching.
- Maximum drain-source resistance is 8.5 ohms ensuring low conduction losses.
- Supports maximum power dissipation of 3.3 W with operating temperatures from -55°C to 150°C.
- Features a typical gate charge of 7 nC and gate-source voltage range of -30 V to +30 V.
- Package dimensions measure 6.5 mm length, 3.5 mm width, and 1.8 mm height.
- Suitable for surface mount applications requiring reliable and efficient discrete semiconductor devices.
Product Description
STMicroelectronics STN1HNK60 MDmesh SuperMESH N-Channel MOSFET is a high-performance semiconductor device engineered for industrial and electronic component applications requiring reliable switching and amplification at voltages up to 600 V and currents up to 400 mA.
It features a compact 4-Pin SOT-223 surface mount package optimized for efficient circuit layout and heat dissipation. With an enhancement channel mode and low maximum drain-source resistance of 8.5 ohms, this MOSFET ensures minimal power loss in operation.
The device supports a maximum power dissipation of 3.3 W and maintains stable operation within a temperature range from -55°C to 150°C, making it suitable for harsh environments. Its typical gate charge is 7 nC at the specified gate voltage, allowing for enhanced switching speeds and power efficiency.
With a forward voltage of 1.6 V and gate-source voltage tolerance between -30 V and +30 V, the MDmesh SuperMESH transistor is ideal for use in power management, industrial, and consumer electronic circuits.
The SOT-223 package has precise dimensions of 6.5 mm length, 3.5 mm width, and 1.8 mm height, enabling compact PCB design and automated assembly processes. This MOSFET provides industrial-grade performance for power switching and amplification applications.
It supports surface mount mounting suited for modern printed circuit boards. Its low on-resistance contributes to energy-efficient device designs. Broad operating temperature and voltage ranges ensure versatility across electronic use cases.
The MDmesh SuperMESH series represents STMicroelectronics’ technology for robust power transistors. Applications include industrial control, power supply units, and discrete semiconductor circuits requiring reliability and compactness.
Explore more MOSFETs and semiconductor products in the Electronics & Electricals category at EnvMart to find suitable components for your electronic and industrial design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 400 mA.
It can handle a maximum drain-source voltage of 600 V.
The package dimensions are 6.5 mm in length, 3.5 mm in width, and 1.8 mm in height.
The typical gate charge is 7 nC at the specified gate voltage.
The maximum power dissipation is 3.3 W.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 8.5 ohms.
This model supports surface mount mounting.
The channel type is N-channel.
The forward voltage is 1.6 V.
The gate-source voltage range is from -30 V to +30 V.
This MOSFET belongs to the MDmesh SuperMESH series.
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