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STMicroelectronics STripFET II N-Channel MOSFET 100 V, 25 A, TO-252 Surface Mount, 3-Pin STD25NF10LT4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD25NF10LT4
Width 6.2mm
Mount Type Surface
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 25A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 35mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 100W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.5V

Key Features

  • The MOSFET features ultra-low gate charge for efficient switching.
  • It supports a maximum power dissipation of 100 W for robust application performance.
  • Maximum drain source resistance is 35 mΩ enabling low conduction loss.
  • Typical gate charge at Vgs is 38 nC, providing fast switching characteristics.
  • It operates within temperature range of -55°C to 175°C for reliability.
  • Package type is TO-252 with a compact 3-pin surface mount design.
  • The device supports a maximum gate source voltage range of -16 V to +16 V.
  • Forward voltage is 1.5 V ensuring stable operation across load conditions.

Product Description

The STMicroelectronics STD25NF10LT4 is a STripFET II N-Channel MOSFET designed for high efficiency and power handling in electronic circuits. With a continuous drain current rating of 25 A and a maximum drain source voltage of 100 V, it suits a variety of power switching applications. Its surface mount TO-252 package with 3 pins allows easy integration into compact circuit designs.

Featuring ultra-low gate charge and low on-resistance, this MOSFET reduces switching losses and heat generation, making it excellent for industrial power converters, automotive electronics, and high-speed switching circuits. The device's maximum drain source resistance of 35 mΩ ensures good conduction efficiency.

Operating over a wide temperature range from -55°C to 175°C, the MOSFET maintains reliable performance in demanding environments. The maximum power dissipation of 100 W allows it to handle substantial power loads safely. Its gate voltage ratings from -16 V to +16 V provide flexibility in drive circuits.

Other key characteristics include a typical gate charge of 38 nC for fast switching transitions, and a forward voltage drop of 1.5 V that supports stable current flow. The compact physical size with length 6.6 mm, width 6.2 mm, and height 2.4 mm enables integration into dense circuit boards and industrial assemblies.

This product is suitable for use in industrial power control, laboratory equipment, automotive systems, and electronic manufacturing applications where efficient switching components are critical. Package contains one MOSFET transistor in TO-252 format.

The MOSFET features ultra-low gate charge for efficient switching. It supports a maximum power dissipation of 100 W for robust application performance. Maximum drain source resistance is 35 mΩ enabling low conduction loss.

Typical gate charge at Vgs is 38 nC, providing fast switching characteristics. It operates within temperature range of -55°C to 175°C for reliability. Package type is TO-252 with a compact 3-pin surface mount design. The device supports a maximum gate source voltage range of -16 V to +16 V.

Forward voltage is 1.5 V ensuring stable operation across load conditions. Explore more STMicroelectronics MOSFET products and related electronic components on EnvMart for industrial and commercial electronics applications.

STMicroelectronics STripFET II N-Channel MOSFET 100 V, 25 A, TO-252 Surface Mount, 3-Pin STD25NF10LT4
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Frequently Asked Questions

The maximum continuous drain current for this model is 25 A.

It can handle a maximum drain source voltage of 100 V.

This MOSFET comes in a TO-252 package type with a 3-pin configuration.

It operates within a temperature range of -55°C to 175°C.

The typical gate charge at Vgs is 38 nC.

The maximum power dissipation is 100 W.

The maximum drain source resistance is 35 mΩ.

The forward voltage drop is 1.5 V.

This model features an N-channel type.

The maximum gate source voltage range is -16 V to +16 V.

The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

This MOSFET belongs to the STripFET II series.

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