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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD25NF10LT4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.5V |
The STMicroelectronics STD25NF10LT4 is a STripFET II N-Channel MOSFET designed for high efficiency and power handling in electronic circuits. With a continuous drain current rating of 25 A and a maximum drain source voltage of 100 V, it suits a variety of power switching applications. Its surface mount TO-252 package with 3 pins allows easy integration into compact circuit designs.
Featuring ultra-low gate charge and low on-resistance, this MOSFET reduces switching losses and heat generation, making it excellent for industrial power converters, automotive electronics, and high-speed switching circuits. The device's maximum drain source resistance of 35 mΩ ensures good conduction efficiency.
Operating over a wide temperature range from -55°C to 175°C, the MOSFET maintains reliable performance in demanding environments. The maximum power dissipation of 100 W allows it to handle substantial power loads safely. Its gate voltage ratings from -16 V to +16 V provide flexibility in drive circuits.
Other key characteristics include a typical gate charge of 38 nC for fast switching transitions, and a forward voltage drop of 1.5 V that supports stable current flow. The compact physical size with length 6.6 mm, width 6.2 mm, and height 2.4 mm enables integration into dense circuit boards and industrial assemblies.
This product is suitable for use in industrial power control, laboratory equipment, automotive systems, and electronic manufacturing applications where efficient switching components are critical. Package contains one MOSFET transistor in TO-252 format.
The MOSFET features ultra-low gate charge for efficient switching. It supports a maximum power dissipation of 100 W for robust application performance. Maximum drain source resistance is 35 mΩ enabling low conduction loss.
Typical gate charge at Vgs is 38 nC, providing fast switching characteristics. It operates within temperature range of -55°C to 175°C for reliability. Package type is TO-252 with a compact 3-pin surface mount design. The device supports a maximum gate source voltage range of -16 V to +16 V.
Forward voltage is 1.5 V ensuring stable operation across load conditions. Explore more STMicroelectronics MOSFET products and related electronic components on EnvMart for industrial and commercial electronics applications.
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