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STMicroelectronics STripFET II N-Channel MOSFET 35A 60V Surface Mount 3-Pin TO-252 STD35NF06LT4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD35NF06LT4
Width 6.2mm
Mount Type Surface
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 35A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 17mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 80W
Typical Gate Charge Qg @ Vgs 25nC
Maximum Gate Source Voltage Vgs -15, +15V
Forward Voltage Vf 1.5V

Key Features

  • The device features ultra-low gate charge of 25 nC for efficient switching performance.
  • Maximum drain-source resistance of 17 milliohms supports low power loss operation.
  • Maximum power dissipation rating is 80 watts, suitable for high power applications.
  • Operating temperature range spans from -55°C to 175°C for reliability in diverse environments.
  • Compact dimensions include length 6.6 mm, width 6.2 mm, and height 2.4 mm.
  • Typical forward voltage drop is 1.5V, enhancing conduction efficiency.
  • Designed with an enhancement mode channel and surface mount TO-252 package for PCB assembly.

Product Description

STMicroelectronics STD35NF06LT4 is a STripFET II N-Channel MOSFET transistor designed for high efficiency power switching applications. It supports a maximum continuous drain current of 35 amperes and a maximum drain-source voltage of 60 volts. This enhancement-mode device comes in a compact 3-pin TO-252 surface mount package ideal for automated assembly in industrial and commercial electronic circuits.

The MOSFET features an ultra-low typical gate charge of 25 nanocoulombs at 25 volts gate-source voltage, enabling rapid switching and minimizing energy losses. Its maximum drain-source resistance of 17 milliohms ensures low conduction losses, making it suitable for power management in applications such as power supplies, motor drives, and power inverters.

Rated for a maximum power dissipation of 80 watts, the STD35NF06LT4 handles substantial current loads efficiently while operating reliably across a wide temperature range from -55°C to 175°C. The device's forward voltage of 1.5 volts contributes to improved conduction performance, supporting industrial and automotive use cases.

With dimensions measuring 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, this MOSFET offers a compact footprint, facilitating space-saving PCB designs. The surface mount package is optimized for modern manufacturing techniques.

The device delivers up to 35A continuous drain current for high-power circuits. Low on-resistance (Rds) of 17 mΩ reduces heat generation and energy loss. Wide operating temperature range supports harsh industrial environments.

Compact and standardized TO-252 package suitable for automated surface mount soldering. Enhancement mode N-Channel operation for efficient switching. Gate voltage tolerance of -15 to +15 volts ensures robustness in control signals.

Forward voltage drop of 1.5 volts enhances conduction efficiency.

This product is ideal for use in industrial electronics, power management modules, automotive electronics, renewable energy systems, and other applications requiring robust and efficient MOSFET switching elements.

Explore the full range of high-quality STMicroelectronics MOSFETs and other discrete semiconductor components at EnvMart to meet your electronic component sourcing needs.

STMicroelectronics STripFET II N-Channel MOSFET 35A 60V Surface Mount 3-Pin TO-252 STD35NF06LT4
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Frequently Asked Questions

The maximum continuous drain current for this model is 35 amperes.

This MOSFET has a maximum drain-source voltage rating of 60 volts.

The dimensions of this model are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

The typical gate charge for this MOSFET is 25 nanocoulombs at a gate-source voltage of 25 volts.

The maximum power dissipation rating for this device is 80 watts.

The maximum drain-source resistance is 17 milliohms, which helps ensure low power loss operation.

The operating temperature range for this model spans from -55°C to 175°C.

This model uses a TO-252 surface mount package, which is suitable for automated assembly.

The typical forward voltage drop for this device is 1.5 volts, enhancing conduction efficiency.

This device features an N-channel type, designed for enhancement mode operation.

The maximum gate-source voltage tolerance for this MOSFET is -15 to +15 volts.

This MOSFET is suitable for applications such as power supplies, motor drives, and power inverters.

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